{"title":"MeV ion implantation and application","authors":"Chengzhou Ji, W. Lu, Guohui Li","doi":"10.1109/ICSICT.1995.503380","DOIUrl":null,"url":null,"abstract":"This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented.