{"title":"MeV离子注入与应用","authors":"Chengzhou Ji, W. Lu, Guohui Li","doi":"10.1109/ICSICT.1995.503380","DOIUrl":null,"url":null,"abstract":"This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MeV ion implantation and application\",\"authors\":\"Chengzhou Ji, W. Lu, Guohui Li\",\"doi\":\"10.1109/ICSICT.1995.503380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
