Metal side-wall pattern with a supporter for X-ray mask

Abstract

A new method for fabricating sub-quarter micron X-ray mask patterns with high aspect ratio for HEMT and MOSFET is proposed. The key point of the method is to make the metal side-wall pattern with a supporter transparent to X-rays. Using the X-ray mask pattern made in the new method, a 93 nm line width positive resist pattern and a 260 nm line width negative resist pattern have been obtained. It is expected that this method could be applied to nanometer X-ray lithography for generation of the patterns of HEMT and MOSFET devices in the near future.