{"title":"金属有机化学气相沉积氮化钽薄膜的性能","authors":"S.C. Sun, M. Tsai, C. Tsai, H. Chiu","doi":"10.1109/ICSICT.1995.503346","DOIUrl":null,"url":null,"abstract":"Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis indicate that 600/spl deg/C as-deposited films exhibit polycrystalline structure with <200> preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of metalorganic chemical vapor deposited tantalum nitride thin films\",\"authors\":\"S.C. Sun, M. Tsai, C. Tsai, H. Chiu\",\"doi\":\"10.1109/ICSICT.1995.503346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis indicate that 600/spl deg/C as-deposited films exhibit polycrystalline structure with <200> preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Properties of metalorganic chemical vapor deposited tantalum nitride thin films
Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis indicate that 600/spl deg/C as-deposited films exhibit polycrystalline structure with <200> preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.
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