High-speed polysilicon emitter bipolar technologies

Abstract

Summary form only given. Since the 1980's, polysilicon emitter has become the main bipolar technology for high-speed, ultra-high-speed and BICMOS IC. In this paper, our group proposed the single polysilicon emitter structure. A set of advanced bipolar technologies such as deep-trench-isolation, ion implantation compensated collector region, polysilicon emitter, emitter-base oxidation spacer isolation, ion implantation rapid thermal annealing, and Cobalt silicide self-align are used for scaling down the devices.