{"title":"平面高压器件端子的二维分析与实验","authors":"Gong Xiaowu, Gao Yumin, Luo Jinsheng","doi":"10.1109/ICSICT.1995.500093","DOIUrl":null,"url":null,"abstract":"Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO/sub 2/ dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2-dimensional analysis and experiment of planar high-voltage device terminal\",\"authors\":\"Gong Xiaowu, Gao Yumin, Luo Jinsheng\",\"doi\":\"10.1109/ICSICT.1995.500093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO/sub 2/ dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.500093\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2-dimensional analysis and experiment of planar high-voltage device terminal
Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO/sub 2/ dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper.