{"title":"高速多晶硅发射极双极技术","authors":"Lichun Zhang, Xuewen Ni, Yangyuan Wang","doi":"10.1109/ICSICT.1995.503553","DOIUrl":null,"url":null,"abstract":"Summary form only given. Since the 1980's, polysilicon emitter has become the main bipolar technology for high-speed, ultra-high-speed and BICMOS IC. In this paper, our group proposed the single polysilicon emitter structure. A set of advanced bipolar technologies such as deep-trench-isolation, ion implantation compensated collector region, polysilicon emitter, emitter-base oxidation spacer isolation, ion implantation rapid thermal annealing, and Cobalt silicide self-align are used for scaling down the devices.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-speed polysilicon emitter bipolar technologies\",\"authors\":\"Lichun Zhang, Xuewen Ni, Yangyuan Wang\",\"doi\":\"10.1109/ICSICT.1995.503553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Since the 1980's, polysilicon emitter has become the main bipolar technology for high-speed, ultra-high-speed and BICMOS IC. In this paper, our group proposed the single polysilicon emitter structure. A set of advanced bipolar technologies such as deep-trench-isolation, ion implantation compensated collector region, polysilicon emitter, emitter-base oxidation spacer isolation, ion implantation rapid thermal annealing, and Cobalt silicide self-align are used for scaling down the devices.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given. Since the 1980's, polysilicon emitter has become the main bipolar technology for high-speed, ultra-high-speed and BICMOS IC. In this paper, our group proposed the single polysilicon emitter structure. A set of advanced bipolar technologies such as deep-trench-isolation, ion implantation compensated collector region, polysilicon emitter, emitter-base oxidation spacer isolation, ion implantation rapid thermal annealing, and Cobalt silicide self-align are used for scaling down the devices.
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