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Proceedings of 8th International Conference on Indium Phosphide and Related Materials最新文献

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On the temperature dependence of the InP(001) bulk and surface dielectric function InP(001)体和表面介电函数的温度依赖性
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492316
M. Zorn, T. Trepk, J. Zettler, C. Meyne, K. Knorr, T. Wethkamp, W. Richter, B. Junno, M. Miller, L. Samuelson
{"title":"On the temperature dependence of the InP(001) bulk and surface dielectric function","authors":"M. Zorn, T. Trepk, J. Zettler, C. Meyne, K. Knorr, T. Wethkamp, W. Richter, B. Junno, M. Miller, L. Samuelson","doi":"10.1109/ICIPRM.1996.492316","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492316","url":null,"abstract":"The bulk dielectric function and the surface dielectric anisotropy (SDA) of InP(001) were determined from room temperature up to 873 K. Measurements were performed on as-grown samples both in a metalorganic vapour phase epitaxy (MOVPE) and a chemical beam epitaxy (CBE) system using a rotating analyser type ellipsometer (SE) and a reflectance anisotropy spectrometer (RAS). The temperature dependence of the bulk critical points was deduced by performing a line shape analysis of the dielectric function in the framework of parabolic band approximation. The SDA spectra were obtained from combined RAS and SE measurements. Oscillator like structures in the SDA spectra are assigned to the dimer related transitions characteristic for the two dominating InP surface reconstructions: (2/spl times/1) and (2/spl times/4). These reconstructions were assigned to the RAS spectra by reflection high-energy electron diffraction (RHEED) measurements in the CBE system. The temperature dependence of the surface related transitions is found to be different to that of the bulk critical points.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130023561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence 用光谱分辨扫描光致发光分析局域外延的均匀性
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491924
M.F. Nuban, S. Krawczyk, M. Buchheit, R. Blanchet, S. Nagy, B. Robinson, D. A. Thompson, J. Simmons
{"title":"Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence","authors":"M.F. Nuban, S. Krawczyk, M. Buchheit, R. Blanchet, S. Nagy, B. Robinson, D. A. Thompson, J. Simmons","doi":"10.1109/ICIPRM.1996.491924","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491924","url":null,"abstract":"In this contribution, room temperature spectrally resolved scanning photoluminescence technique with high spatial resolution (1 /spl mu/m) is introduced and applied to control the uniformity of the composition and of the thickness of quantum well (QW) structures obtained by localized area epitaxy. Furthermore, this technique is applied here to study lateral uniformity of QW InGaAs/InP heterostructures grown by localized area gas source molecular beam epitaxy (GSMBE) at various conditions (temperature, arsine flow rate) and as a function of stripe width and spacing.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130062296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 /spl mu/m DFB laser diodes 高速复杂耦合应变补偿AlGaInAs/ inp1.5 /spl mu/m DFB激光二极管
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492411
F. Steinhagen, H. Hillmer, R. Losch, W. Schlapp, R. Gobel, E. Kuphal, H. Hartnagel, H. Burkhard
{"title":"High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 /spl mu/m DFB laser diodes","authors":"F. Steinhagen, H. Hillmer, R. Losch, W. Schlapp, R. Gobel, E. Kuphal, H. Hartnagel, H. Burkhard","doi":"10.1109/ICIPRM.1996.492411","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492411","url":null,"abstract":"The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130134093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Growth of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice relaxed on GaAs and lattice matched on InP Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As异质结构在GaAs上生长晶格松弛，在InP上生长晶格匹配
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491942
M. Haupt, P. Ganser, K. Kohler, S. Emminger, S. Muller, W. Rothemund
{"title":"Growth of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice relaxed on GaAs and lattice matched on InP","authors":"M. Haupt, P. Ganser, K. Kohler, S. Emminger, S. Muller, W. Rothemund","doi":"10.1109/ICIPRM.1996.491942","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491942","url":null,"abstract":"Ternary Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice matched to InP offer a wide range of applications for electronic and opto-electronic devices. This material system is especially suitable for applications in the long wavelength optical communication range at wavelengths between 1.3 and 1.55 /spl mu/m. Interesting as well is the high electron mobility and concentration achieved in doped Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures for the design of high speed field effect transistors. Since InP substrates are generally more expensive in contrast to the high quality GaAs substrates it seems desirable to combine the advantages of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures with low cost and availability of large GaAs substrates.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"31 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114135223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 20-Gbit/s monolithic photoreceiver using InAlAs/InGaAs HEMT's and regrown p-i-n photodiode 采用InAlAs/InGaAs HEMT和再生p-i-n光电二极管的20 gbit /s单片光接收器
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492276
J. Spicher, B. Klepser, M. Beck, A. Rudra, R. Sachot, M. Ilegems
{"title":"A 20-Gbit/s monolithic photoreceiver using InAlAs/InGaAs HEMT's and regrown p-i-n photodiode","authors":"J. Spicher, B. Klepser, M. Beck, A. Rudra, R. Sachot, M. Ilegems","doi":"10.1109/ICIPRM.1996.492276","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492276","url":null,"abstract":"A two-step growth approach was used to monolithically integrate p-i-n InGaAs photodiodes with a InAlAs/InGaAs lattice matched to InP HEMT preamplifier. The HEMT structure was first grown by MBE and CBE was used to regrow the p-i-n structure. The use of a CVD-SiO/sub 2/ mask layer to achieve selective regrowth was found to severely degrade the underlying HEMT layers. Using a non selective regrowth method, high quality regrown material was obtained and a decrease of less than 10% was measured for the HEMT channel sheet resistance. With this integration process photoreceivers showing a bandwidth of 18 GHz were fabricated.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116835540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
1 mA-threshold operation of 1.3 /spl mu/m tensile-strained GaInAsP/InP MQW lasers 1.3 /spl mu/m拉伸应变GaInAsP/InP MQW激光器的1 ma阈值操作
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492264
N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa
{"title":"1 mA-threshold operation of 1.3 /spl mu/m tensile-strained GaInAsP/InP MQW lasers","authors":"N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa","doi":"10.1109/ICIPRM.1996.492264","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492264","url":null,"abstract":"Threshold current of 1.3 /spl mu/m tensile-strained GaInAsP/InP multiple quantum well (MQW) lasers is investigated. The device has strain-compensated MQW as an active region which consists of -1.15% tensile-strained well and 0.35% compressive-strained barrier. The lowest threshold current of 1.0 mA was obtained in a triple quantum well (3 QW) laser with 120 /spl mu/m-long cavity and high reflective coatings. High temperature operation is also investigated, and the maximum operating temperature T/sub max/ is 120/spl deg/C for a 3 QW laser and 150/spl deg/C for a 5 QW laser.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114990794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Versatile reactive ion beam etching (RIBE) of InP-based material using CH/sub 4//H/sub 2//Ar chemistry 基于CH/sub - 4/ H/sub - 2/ Ar化学的inp基材料的多用途反应离子束蚀刻(RIBE
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491949
P. Boury, G. Landgren
{"title":"Versatile reactive ion beam etching (RIBE) of InP-based material using CH/sub 4//H/sub 2//Ar chemistry","authors":"P. Boury, G. Landgren","doi":"10.1109/ICIPRM.1996.491949","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491949","url":null,"abstract":"We have investigated RIBE processes for etching InP and related materials using the non-corrosive CH/sub 4//H/sub 2//Ar gas chemistry. The etch rates, surface morphology and etch profiles and have been studied as a function of plasma parameters and gas mixtures. The equipment has been an inductively coupled RF ion gun with a two grid extraction system. Chamber pressure during the process has been about 10/sup -4/ mbar. Sample temperatures depended somewhat on the energy and etch time but were always maintained below 100 C.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131812101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comprehensive model for high pressure growth of InP crystals InP晶体高压生长的综合模型
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491928
Y. Zou, T. Zhang, E. Nunes, H. Zhang, V. Prasad, F. Ladeinde, M. Naraghi, A. Anselmo, D. Bliss, K. P. Gupta
{"title":"A comprehensive model for high pressure growth of InP crystals","authors":"Y. Zou, T. Zhang, E. Nunes, H. Zhang, V. Prasad, F. Ladeinde, M. Naraghi, A. Anselmo, D. Bliss, K. P. Gupta","doi":"10.1109/ICIPRM.1996.491928","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491928","url":null,"abstract":"We have developed a comprehensive model that accounts for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the InP crystal is simultaneously calculated using the temperature distribution and crystal/melt interface shape obtained from the thermal transport simulation. A sophisticated adaptive grid generation technique together with the curvilinear finite volume discretization and several other high resolution numerical schemes have made it possible to simulate the growth of a compound crystal in a high pressure system.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"79 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132228415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices 用于光学MQW-SPSL器件的InAlAs/InGaAs/InP异质结构的低缺陷和高均匀性固源分子束外延
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491940
K. Panzlaff, T. Feifel, H. Storm
{"title":"Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices","authors":"K. Panzlaff, T. Feifel, H. Storm","doi":"10.1109/ICIPRM.1996.491940","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491940","url":null,"abstract":"The authors present the reproducible growth of a defect density as low as 15/cm/sup 2/ and a uniformity as high as +/-0.2% of InGaAs/InAlAs heterostructures on InP substrates which are suitable for mass production. Results on InP and related heterostructures grown by MBE indicate that it is possible to achieve similar quality for P-containing compounds. Different device structures, containing both InAlAs/InGaAs SPSLs and InP have been grown.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133452787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal behaviour of 1.3 /spl mu/m vertical cavity surface emitting laser 1.3 /spl μ m垂直腔面发射激光器的热特性
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492397
A. Plais, P. Salet, C. Starck, A. Pinquier, E. Derouin, C. Fortin, T. Fillion, J. Jacquet, F. Brillouet
{"title":"Thermal behaviour of 1.3 /spl mu/m vertical cavity surface emitting laser","authors":"A. Plais, P. Salet, C. Starck, A. Pinquier, E. Derouin, C. Fortin, T. Fillion, J. Jacquet, F. Brillouet","doi":"10.1109/ICIPRM.1996.492397","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492397","url":null,"abstract":"Room temperature, pulsed operation of 1.3 /spl mu/m InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and n sides. We discuss the laser results pointing out the importance of thermal properties. The thermal resistance is estimated for p- and n-down mounted lasers.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116065412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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