基于CH/sub - 4/ H/sub - 2/ Ar化学的inp基材料的多用途反应离子束蚀刻(RIBE

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491949

P. Boury, G. Landgren

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引用次数: 0

摘要

我们研究了利用无腐蚀性CH/sub - 4//H/sub - 2//Ar气体化学腐蚀InP和相关材料的RIBE工艺。研究了等离子体参数和气体混合物对蚀刻速率、表面形貌和蚀刻轮廓的影响。该设备是一种电感耦合射频离子枪，具有双栅格萃取系统。在此过程中，腔室压力约为10/sup -4/ mbar。样品温度在一定程度上取决于能量和蚀刻时间，但始终保持在100℃以下。

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Versatile reactive ion beam etching (RIBE) of InP-based material using CH/sub 4//H/sub 2//Ar chemistry

We have investigated RIBE processes for etching InP and related materials using the non-corrosive CH/sub 4//H/sub 2//Ar gas chemistry. The etch rates, surface morphology and etch profiles and have been studied as a function of plasma parameters and gas mixtures. The equipment has been an inductively coupled RF ion gun with a two grid extraction system. Chamber pressure during the process has been about 10/sup -4/ mbar. Sample temperatures depended somewhat on the energy and etch time but were always maintained below 100 C.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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