发布求助
文献互助 智能选刊 最新文献

Proceedings of 8th International Conference on Indium Phosphide and Related Materials最新文献

筛选
英文 中文
High characteristics temperature of strain-compensated 1.3 /spl mu/m InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy 全固体源分子束外延生长应变补偿1.3 /spl mu/m InAsP/InGaP/InP多量子阱激光器的高特性温度
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492400
P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison
{"title":"High characteristics temperature of strain-compensated 1.3 /spl mu/m InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy","authors":"P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison","doi":"10.1109/ICIPRM.1996.492400","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492400","url":null,"abstract":"In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T/sub 0/ value of about 100 K in the temperature range 20-80/spl deg/C and low threshold current density of 87 A/cm/sup 2/ per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115115356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of defect structures in MLEK grown InP single crystals by synchrotron white beam X-ray topography MLEK生长InP单晶缺陷结构的同步白束x射线形貌研究
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492322
W. Si, H. Chung, M. Dudley, A. Anselmo, D. F. Bliss, V. Prasad
{"title":"Study of defect structures in MLEK grown InP single crystals by synchrotron white beam X-ray topography","authors":"W. Si, H. Chung, M. Dudley, A. Anselmo, D. F. Bliss, V. Prasad","doi":"10.1109/ICIPRM.1996.492322","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492322","url":null,"abstract":"The application of synchrotron white beam X-ray topography (SWBXT) as a non-destructive diagnostic technique to the characterization of defect structures in large size InP single crystals was presented. Various kinds of defect configurations, including slip bands, micro-twin lamellae, growth striations, individual dislocations, and precipitates, were revealed. The relationship between defect formation and growth conditions was briefly discussed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123541626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
1.55 /spl mu/m MQW-DFB Q-switch two-section laser for high frequency-short pulse generation 1.55 /spl mu/m MQW-DFB调q双段激光器，用于产生高频短脉冲
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492409
E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau
{"title":"1.55 /spl mu/m MQW-DFB Q-switch two-section laser for high frequency-short pulse generation","authors":"E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau","doi":"10.1109/ICIPRM.1996.492409","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492409","url":null,"abstract":"The generation of short optical pulses at 1.55 /spl mu/m with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 /spl mu/m), is applied to the saturable absorber. The LD fabrication and characteristics are discussed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116071399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parasitic-free study of carrier transport in asymmetric 1.55 /spl mu/m MQW laser structures 非对称1.55 /spl μ m MQW激光结构中载流子输运的无寄生研究
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491963
R. Zimmermann, S. Kramer, F. Steinhagen, H. Hillmer, H. Burkhard, A. Hangleiter
{"title":"Parasitic-free study of carrier transport in asymmetric 1.55 /spl mu/m MQW laser structures","authors":"R. Zimmermann, S. Kramer, F. Steinhagen, H. Hillmer, H. Burkhard, A. Hangleiter","doi":"10.1109/ICIPRM.1996.491963","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491963","url":null,"abstract":"Carrier transport is supposed to be one of the major limiting processes for the high speed dynamics of SCH-MQW laser structures. It contributes to gain compression in addition to phenomena like spectral holeburning or carrier heating. The carrier transport effect also shows its influence in an RC-like rolloff of the high frequency response of laser devices. This reduction in bandwidth has been studied in the past to overcome transport problems in finding the appropriate structure, It has been proposed that it is mostly the slow transport of the heavier holes which limits the laser bandwidth. In this paper we have studied the phenomenon of carrier transport by investigating two asymmetric confined laser structures, using a parasitic-free optical modulation method. This made it possible to measure the apparent carrier transport time not only in total but for each side of the confinement layer. Finally we result in a diffusion constant for the barrier/confinement carriers in InGaAlAs material which is in good agreement with reported mobilities.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116243700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors 采用InGaAs/InP双异质结构双极晶体管的12gb /s激光光调制器驱动电路
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491934
R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior
{"title":"A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors","authors":"R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior","doi":"10.1109/ICIPRM.1996.491934","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491934","url":null,"abstract":"A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124690611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
[001] interface anisotropy using degree of polarization [quantum wells] [001]基于极化度的界面各向异性研究[量子阱]
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491925
B. Lakshmi, B. Robinson, D. Cassidy
{"title":"[001] interface anisotropy using degree of polarization [quantum wells]","authors":"B. Lakshmi, B. Robinson, D. Cassidy","doi":"10.1109/ICIPRM.1996.491925","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491925","url":null,"abstract":"The authors report the measurement of the polarization of luminescence from the [001] surface ([001] growth direction) and relate the observations to interfacial structure of the quantum wells in zinc blende semiconductors.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123836156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3-bit, 8 GSPS flash ADC 3位，8 GSPS闪存ADC
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491935
Cynthia Baringer, J. Jensen, Larry Burns, Bob Walden
{"title":"3-bit, 8 GSPS flash ADC","authors":"Cynthia Baringer, J. Jensen, Larry Burns, Bob Walden","doi":"10.1109/ICIPRM.1996.491935","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491935","url":null,"abstract":"A 3-bit multi-Gigasamples/sec (Gs/s) flash analog-to-digital converter (ADC) for high-speed data acquisition systems is reported in this paper. Nyquist operation up to 8 Gs/s has been achieved. The quantizer can convert analog input signals beyond fs/2 up to fs at a sampling rate of 5 Gs/s. In addition, the converter can be operated up to 12.7 Gs/s when the input signal is at low frequencies. This ADC is fabricated in an AlInAs-GaInAs HBT process fabricated on InP substrates with an f/sub T/ of 75 GHz and f/sub max/ of 85 GHz.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116362044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy 用ECR等离子体辅助外延技术改善InP上生长的InGaAsP的结构和光学性能
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492297
R. LaPierre, B. Robinson, D. A. Thompson
{"title":"Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy","authors":"R. LaPierre, B. Robinson, D. A. Thompson","doi":"10.1109/ICIPRM.1996.492297","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492297","url":null,"abstract":"In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124323765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures MOVPE生长条件和衬底参数对多周期InGaAsP/InP MQW结构质量的影响
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492268
F. Reier, C. Bornholdt, D. Hoffmann, F. Kappe, L. Morl
{"title":"Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures","authors":"F. Reier, C. Bornholdt, D. Hoffmann, F. Kappe, L. Morl","doi":"10.1109/ICIPRM.1996.492268","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492268","url":null,"abstract":"In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127714841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy 线性光谱学实时监测p基半导体生长
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492317
K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers
{"title":"Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy","authors":"K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers","doi":"10.1109/ICIPRM.1996.492317","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492317","url":null,"abstract":"In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121716944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信