[001]基于极化度的界面各向异性研究[量子阱]

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491925

B. Lakshmi, B. Robinson, D. Cassidy

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引用次数: 0

摘要

本文报道了从[001]表面([001]生长方向)测量的发光偏振，并将观测结果与锌闪锌矿半导体中量子阱的界面结构联系起来。

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[001] interface anisotropy using degree of polarization [quantum wells]

The authors report the measurement of the polarization of luminescence from the [001] surface ([001] growth direction) and relate the observations to interfacial structure of the quantum wells in zinc blende semiconductors.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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