Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy

Abstract

In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.