线性光谱学实时监测p基半导体生长

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492317

K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers

{"title":"线性光谱学实时监测p基半导体生长","authors":"K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers","doi":"10.1109/ICIPRM.1996.492317","DOIUrl":null,"url":null,"abstract":"In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy\",\"authors\":\"K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers\",\"doi\":\"10.1109/ICIPRM.1996.492317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492317\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在金属有机气相外延(MOVPE)反应器中，同时应用两种光学方法，即反射各向异性光谱(RAS)和光谱椭圆偏振(SE)来对生长的所有步骤进行一般表征。为了确定氧化铟磷的解吸温度，研究了氧化铟磷的脱氧行为。用RAS测量了掺杂对光谱的影响，并根据光学数据原位测定了InP的表面温度。最后，通过对生长过程中的法布里-珀罗振荡的评价，用RAS测定了GaAs上InGaP的生长速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy

In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量