用ECR等离子体辅助外延技术改善InP上生长的InGaAsP的结构和光学性能

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492297

R. LaPierre, B. Robinson, D. A. Thompson

{"title":"用ECR等离子体辅助外延技术改善InP上生长的InGaAsP的结构和光学性能","authors":"R. LaPierre, B. Robinson, D. A. Thompson","doi":"10.1109/ICIPRM.1996.492297","DOIUrl":null,"url":null,"abstract":"In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy\",\"authors\":\"R. LaPierre, B. Robinson, D. A. Thompson\",\"doi\":\"10.1109/ICIPRM.1996.492297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，等离子体辅助外延被证明是一种替代技术，用于减少在(100)InP衬底上生长的厚InGaAsP层和单量子阱(qw)中的横向组成调制(LCM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy

In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量