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Proceedings of 8th International Conference on Indium Phosphide and Related Materials最新文献

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InAlGaAs-InGaAs-InP RCE pin photodiode 1300 nm wavelength region InAlGaAs-InGaAs-InP RCE引脚光电二极管1300 nm波长区域
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491976
J. Kovác, F. Uherek, A. Šatka, J. Waclawek, J. Jakabovic, R. Srnánek, B. Rheinlander, V. Gottschalch, S. Hasenőhrl, J. Novak, P. Barna, A. Barna, J. Wood
{"title":"InAlGaAs-InGaAs-InP RCE pin photodiode 1300 nm wavelength region","authors":"J. Kovác, F. Uherek, A. Šatka, J. Waclawek, J. Jakabovic, R. Srnánek, B. Rheinlander, V. Gottschalch, S. Hasenőhrl, J. Novak, P. Barna, A. Barna, J. Wood","doi":"10.1109/ICIPRM.1996.491976","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491976","url":null,"abstract":"Currently, resonant cavity enhanced (RCE) photodetectors have received a great deal of attention for applications of photoreceivers with wavelength-selective capabilities and higher bandwith efficiency product. In the present work, we report on the design, growth and properties of RCE PIN photodiodes for 1300 nm wavelength region using In/sub 0.52/Al/sub 0.21/Ga/sub 0.27/As/InP bottom mirror overgrown by In/sub 0.5/3Ga/sub 0.47/As/InP PIN photodiode.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125788390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
In-situ grown dots of InP on GaAs and GaInP-a comparison 在GaAs和gainp上原位生长InP点的比较
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492403
W. Seifert, N. Carlsson, P. Castrillo, D. Hessman, T. Junno, M. Pistol, L. Samuelson, R. Wallenberg
{"title":"In-situ grown dots of InP on GaAs and GaInP-a comparison","authors":"W. Seifert, N. Carlsson, P. Castrillo, D. Hessman, T. Junno, M. Pistol, L. Samuelson, R. Wallenberg","doi":"10.1109/ICIPRM.1996.492403","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492403","url":null,"abstract":"Shape, size and density of dots of InP on GaInP and GaAs surfaces, formed in-situ by the strain-induced phase transition from a two-dimensional (Frank-Van der Merwe) into a three-dimensional layer+islands (Stranski-Krastanow) morphology, are investigated. The observations support models which include the kinetics of island formation as important ingredients to explain the rather high size homogeneity of the dots.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122298813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect suppression from the compound semiconductor heterointerfaces 化合物半导体异质界面的缺陷抑制
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492292
S. Kalem, A. Curtis, Q. Hartmann, S. Thomas, D. Turnbull, H. Chuang, S. G. Bishop, G. Stillman
{"title":"Defect suppression from the compound semiconductor heterointerfaces","authors":"S. Kalem, A. Curtis, Q. Hartmann, S. Thomas, D. Turnbull, H. Chuang, S. G. Bishop, G. Stillman","doi":"10.1109/ICIPRM.1996.492292","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492292","url":null,"abstract":"We report on the effect of inserting ultra-thin InAs layers at the heterointerfaces on physical properties of GaAs/InGaP on GaAs and InP/GaAs on InP grown by MOCVD and MOMBE, respectively. It is shown that the insertion of ultra thin InAs layers at the heterostructure interfaces has a significant effect in eliminating defects from the interfaces.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125018384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the advantages of InAlAs/InGaAs/InP dual-gate-HFETs in comparison to conventional single-gate-HFETs InAlAs/InGaAs/InP双栅hfet相对于传统单栅hfet的优势
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492282
W. Daumann, W. Brockerhoff, R. Bertenburg, R. Reuter, U. Auer, W. Molls, F. Tegude
{"title":"On the advantages of InAlAs/InGaAs/InP dual-gate-HFETs in comparison to conventional single-gate-HFETs","authors":"W. Daumann, W. Brockerhoff, R. Bertenburg, R. Reuter, U. Auer, W. Molls, F. Tegude","doi":"10.1109/ICIPRM.1996.492282","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492282","url":null,"abstract":"Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequently, the gate leakage current can be significantly reduced. A direct comparison between both, the DGHFET and the SGHFET, will precisely point out the advantages of a DGHFET compared to a SGHFET in the InAlAs/InGaAs system.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"130 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124951015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1-10 GHz interface engineered SiN/sub x//InP/InGaAs HIGFET technology 1- 10ghz接口设计的SiN/sub //InP/InGaAs HIGFET技术
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492389
C.S. Sundararaman, M. Tazlauanu, P. Mihelich, A. Bensaada, R. Masut
{"title":"A 1-10 GHz interface engineered SiN/sub x//InP/InGaAs HIGFET technology","authors":"C.S. Sundararaman, M. Tazlauanu, P. Mihelich, A. Bensaada, R. Masut","doi":"10.1109/ICIPRM.1996.492389","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492389","url":null,"abstract":"The evolution of an unique interface control layer (ICL) SiN/sub x//lnP/InGaAs Heterojunction Insulated Gate (HIG)FET technology is described from its inception. An In-S monolayer ICL, formed by a novel photoelectrochemical process, is used to reduce and control trap states at the SiN/sub x//InP interface. Buried channel insulated gate ICL HIGFETs fabricated using this approach operate over a large gate voltage range (V/sub gs/=/spl plusmn/8 V) with very low gate leakage (10 nA@V/sub gs/=/spl plusmn/5 V) and I/sub ds/(sat) of 250 mA/mm. Undoped channel ICL HIGFETs exhibit transconductance (g/sub m/) of 40 mS/mm that is limited by conduction through the buffer layer. A 3 to 4 fold improvement in g/sub m/ (140-150 mS/mm) is achieved by using a doped InGaAs channel and eliminating parallel conduction paths through the device. The doped channel HIGFETs show f/sub t/ of 5-6 GHz (Lg=3 /spl mu/m) and f/sub max/ of 10-12 GHz with a power gain of 14.2 dB at 3 GHz. The ICL HIGFET technology has been used to construct simple circuits such as buffer amplifiers with a gain of 7-10 dB at 3 GHz and recently, high frequency sample and hold ICL HIGFET circuits that operate at frequencies of 2 GHz.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130340703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of ternary and quaternary compounds on non-planar InP substrates 三元和季元化合物在非平面InP衬底上的生长
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492296
C. Mullan, B. Robinson, D. A. Thompson, G. Weatherly
{"title":"Growth of ternary and quaternary compounds on non-planar InP substrates","authors":"C. Mullan, B. Robinson, D. A. Thompson, G. Weatherly","doi":"10.1109/ICIPRM.1996.492296","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492296","url":null,"abstract":"We have previously shown how InP, InGaAs and InGaAsP deposited onto etched DFB gratings under the same conditions act differently and here we will show both how the atomic concentrations change in deposited InGaAs and InGaAsP layers with position above the grating and how the total incorporation rate changes when compared to growth on a planar substrate.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127283104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors InAlAs/InGaAs异质结构场效应晶体管高漏极偏压栅漏机理的表征与分析
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492333
U. Auer, R. Reuter, P. Ellrodt, W. Prost, F. Tegude
{"title":"Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors","authors":"U. Auer, R. Reuter, P. Ellrodt, W. Prost, F. Tegude","doi":"10.1109/ICIPRM.1996.492333","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492333","url":null,"abstract":"InAlAs/InGaAs Heterostructure Field-Effect Transistors (HFET) exhibit excellent DC- and RF- performance and are well suited for low power applications in the millimeter-wavelength range. Using sophisticated crystal growth modes and device fabrication techniques, the capability of high power applications was also demonstrated. But with increasing drain-source voltages V/sub ds/>3 V it new parasitic phenomenon can be detected additive to the well-known gate leakage mechanism. An exponentially growing gate current bump, strongly dependent on the HFET design, appears at positive gate-source voltages V/sub gs/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126339257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
AlInAs/GaInAs HEMT with AlInP barrier layer 具有AlInP势垒层的AlInAs/GaInAs HEMT
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492384
R. Palla, J. Harmand, S. Biblemont, A. Clei
{"title":"AlInAs/GaInAs HEMT with AlInP barrier layer","authors":"R. Palla, J. Harmand, S. Biblemont, A. Clei","doi":"10.1109/ICIPRM.1996.492384","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492384","url":null,"abstract":"Due to its high frequency and noise performances, AlInAs/GaInAs/InP HEMT is a very good candidate for high bit rate optical communications or millimeter-wave circuits applications. Transistors with impressive cut-off frequencies have been demonstrated. However, the use of these devices is plagued by excess gate leakage current and low breakdown voltage originating from impact ionization in the low energy bandgap GaInAs channel. Moreover, a fine adjustment of the gate recess depth has proven to be very difficult, impacting the control of the transistor pinch-off voltage and its homogeneity over the wafer. In order to reduce these deleterious effects, improvements in the transistor structure have been proposed, and the insertion of a semiconductor layer with appropriate characteristics between the transistor gate and channel has proven to be a valuable solution.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124016799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigations of the Faraday effect in Fe-doped InP 掺铁InP中法拉第效应的研究
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492311
B. Stadler, J. P. Lorenzo, D. F. Bliss
{"title":"Investigations of the Faraday effect in Fe-doped InP","authors":"B. Stadler, J. P. Lorenzo, D. F. Bliss","doi":"10.1109/ICIPRM.1996.492311","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492311","url":null,"abstract":"The magneto-optical Faraday rotation was measured for several Fe doped InP wafers. These measurements provided information on the variations in Fe concentration across a single Fe:InP boule. The Fe concentration was observed to increase in the boule with distance from the seed to the tail. This trend was verified with optical absorption spectra, which were also used to estimate the net changes in Fe concentration within the boule. From low temperature optical absorption spectroscopy, the net Fe concentration was estimated to be 1.124/spl times/10/sup 17/ cm/sup -3/. However, the net Fe concentration derived from our room temperature absorption spectra was 1.7/spl times/10/sup 17/ cm/sup -3/ Finally, the dispersion of the Faraday rotation in the Fe:InP crystal was measured.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117296380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fabrication of high-performance InP MESFETs with in-situ pulse-plated metal gates 原位脉冲镀金属栅极制备高性能InP mesfet
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492048
S. Uno, T. Hashizume, T. Sato, H. Hasegawa
{"title":"Fabrication of high-performance InP MESFETs with in-situ pulse-plated metal gates","authors":"S. Uno, T. Hashizume, T. Sato, H. Hasegawa","doi":"10.1109/ICIPRM.1996.492048","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492048","url":null,"abstract":"Although InP has higher saturation velocity and higher thermal conductivity than GaAs, its use in the active channel of electron devices has been limited by lack of suitable Schottky gate technology. The purpose of this paper is to demonstrate that high-performance InP MESFETs with Schottky barrier heights (SBHs)=0.85-0.89 eV can be realized by a novel in-situ electrochemical etching/plating technique. The InP Schottky barriers produced by this electrochemical process are free of interfacial oxides and Fermi level pinning is removed, realizing workfunction-dependent SBHs. High-barrier height, low-leakage and stable InP MESFETs are realized for the first time using this process.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131595459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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