InAlGaAs-InGaAs-InP RCE pin photodiode 1300 nm wavelength region

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491976

J. Kovác, F. Uherek, A. Šatka, J. Waclawek, J. Jakabovic, R. Srnánek, B. Rheinlander, V. Gottschalch, S. Hasenőhrl, J. Novak, P. Barna, A. Barna, J. Wood

引用次数: 8

Abstract

Currently, resonant cavity enhanced (RCE) photodetectors have received a great deal of attention for applications of photoreceivers with wavelength-selective capabilities and higher bandwith efficiency product. In the present work, we report on the design, growth and properties of RCE PIN photodiodes for 1300 nm wavelength region using In/sub 0.52/Al/sub 0.21/Ga/sub 0.27/As/InP bottom mirror overgrown by In/sub 0.5/3Ga/sub 0.47/As/InP PIN photodiode.

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InAlGaAs-InGaAs-InP RCE引脚光电二极管1300 nm波长区域

目前，谐振腔增强(RCE)光电探测器由于具有波长选择能力和更高的带效率积而受到广泛关注。本文报道了用In/sub 0.5/3Ga/sub 0.47/As/InP PIN光电二极管覆盖In/sub 0.52/Al/sub 0.21/Ga/sub 0.27/As/InP底镜制备1300 nm波长区域的RCE PIN光电二极管的设计、生长和性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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