Defect suppression from the compound semiconductor heterointerfaces

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492292

S. Kalem, A. Curtis, Q. Hartmann, S. Thomas, D. Turnbull, H. Chuang, S. G. Bishop, G. Stillman

引用次数: 2

Abstract

We report on the effect of inserting ultra-thin InAs layers at the heterointerfaces on physical properties of GaAs/InGaP on GaAs and InP/GaAs on InP grown by MOCVD and MOMBE, respectively. It is shown that the insertion of ultra thin InAs layers at the heterostructure interfaces has a significant effect in eliminating defects from the interfaces.

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化合物半导体异质界面的缺陷抑制

本文报道了在异质界面处插入超薄InAs层对GaAs上GaAs/InGaP和MOCVD和MOMBE生长的InP上InP/GaAs的物理性质的影响。结果表明，在异质结构界面处插入超薄InAs层对消除界面缺陷有显著的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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