On the advantages of InAlAs/InGaAs/InP dual-gate-HFETs in comparison to conventional single-gate-HFETs

Abstract

Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequently, the gate leakage current can be significantly reduced. A direct comparison between both, the DGHFET and the SGHFET, will precisely point out the advantages of a DGHFET compared to a SGHFET in the InAlAs/InGaAs system.