在GaAs和gainp上原位生长InP点的比较

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492403

W. Seifert, N. Carlsson, P. Castrillo, D. Hessman, T. Junno, M. Pistol, L. Samuelson, R. Wallenberg

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引用次数: 0

摘要

本文研究了由二维(Frank-Van der Merwe)向三维层+岛(Stranski-Krastanow)形态的应变诱导相变在GaInP和GaAs表面上形成的InP点的形状、大小和密度。观测结果支持包括岛屿形成动力学在内的模型，这些模型是解释点的相当高的尺寸均匀性的重要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-situ grown dots of InP on GaAs and GaInP-a comparison

Shape, size and density of dots of InP on GaInP and GaAs surfaces, formed in-situ by the strain-induced phase transition from a two-dimensional (Frank-Van der Merwe) into a three-dimensional layer+islands (Stranski-Krastanow) morphology, are investigated. The observations support models which include the kinetics of island formation as important ingredients to explain the rather high size homogeneity of the dots.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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