三元和季元化合物在非平面InP衬底上的生长

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492296

C. Mullan, B. Robinson, D. A. Thompson, G. Weatherly

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引用次数: 0

摘要

我们之前已经展示了在相同条件下沉积在蚀刻DFB光栅上的InP, InGaAs和InGaAsP如何表现不同的行为，这里我们将展示沉积的InGaAs和InGaAsP层中的原子浓度如何随光栅上方位置的变化而变化，以及与在平面衬底上生长相比，总掺入率如何变化。

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Growth of ternary and quaternary compounds on non-planar InP substrates

We have previously shown how InP, InGaAs and InGaAsP deposited onto etched DFB gratings under the same conditions act differently and here we will show both how the atomic concentrations change in deposited InGaAs and InGaAsP layers with position above the grating and how the total incorporation rate changes when compared to growth on a planar substrate.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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