InAlAs/InGaAs/InP双栅hfet相对于传统单栅hfet的优势

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492282

W. Daumann, W. Brockerhoff, R. Bertenburg, R. Reuter, U. Auer, W. Molls, F. Tegude

{"title":"InAlAs/InGaAs/InP双栅hfet相对于传统单栅hfet的优势","authors":"W. Daumann, W. Brockerhoff, R. Bertenburg, R. Reuter, U. Auer, W. Molls, F. Tegude","doi":"10.1109/ICIPRM.1996.492282","DOIUrl":null,"url":null,"abstract":"Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequently, the gate leakage current can be significantly reduced. A direct comparison between both, the DGHFET and the SGHFET, will precisely point out the advantages of a DGHFET compared to a SGHFET in the InAlAs/InGaAs system.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"130 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the advantages of InAlAs/InGaAs/InP dual-gate-HFETs in comparison to conventional single-gate-HFETs\",\"authors\":\"W. Daumann, W. Brockerhoff, R. Bertenburg, R. Reuter, U. Auer, W. Molls, F. Tegude\",\"doi\":\"10.1109/ICIPRM.1996.492282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequently, the gate leakage current can be significantly reduced. A direct comparison between both, the DGHFET and the SGHFET, will precisely point out the advantages of a DGHFET compared to a SGHFET in the InAlAs/InGaAs system.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"130 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

证明了使用双栅极HFET (DGHFET)代替传统的InAlAs/lnGaAs单栅极HFET (SGHFET)作为级联码可以防止冲击电离本身，而不会降低器件的直流和射频性能，因此，栅极泄漏电流可以显着降低。DGHFET和SGHFET之间的直接比较将准确地指出在InAlAs/InGaAs系统中，DGHFET与SGHFET相比具有优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

On the advantages of InAlAs/InGaAs/InP dual-gate-HFETs in comparison to conventional single-gate-HFETs

Demonstrates that using a Dual-Gate-HFET (DGHFET) as a cascode instead of a conventional InAlAs/lnGaAs Single-Gate HFET (SGHFET) impact ionization itself can be prevented without degradation of the DC- and RF-performance of the device, and consequently, the gate leakage current can be significantly reduced. A direct comparison between both, the DGHFET and the SGHFET, will precisely point out the advantages of a DGHFET compared to a SGHFET in the InAlAs/InGaAs system.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量