全固体源分子束外延生长应变补偿1.3 /spl mu/m InAsP/InGaP/InP多量子阱激光器的高特性温度

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492400

P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison

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引用次数: 0

摘要

本文研究了全固体源分子束外延(SSMBE)生长的10量子瓦的InAsP/InGaP/InP应变补偿激光器。据报道，在20-80/spl℃温度范围内，高特征温度T/sub 0/值约为100 K，无限腔长下每孔的阈值电流密度为87 A/cm/sup 2/。我们的结果清楚地表明InAsP/InGaP应变补偿系统适用于高温下的激光器。此外，结合我们早期的研究结果表明，SSMBE是一种具有竞争力的光电器件生长方法。

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High characteristics temperature of strain-compensated 1.3 /spl mu/m InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T/sub 0/ value of about 100 K in the temperature range 20-80/spl deg/C and low threshold current density of 87 A/cm/sup 2/ per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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