采用InGaAs/InP双异质结构双极晶体管的12gb /s激光光调制器驱动电路

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491934

R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior

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引用次数: 6

摘要

提出了一种用于光纤链路中半导体激光器和光调制器的通用驱动电路。该集成电路采用基于movpe的InGaAs/InP双异质结构双极晶体管技术，f/sub T/=66 GHz, f/sub max/=107 GHz。该电路的工作速度高达12gb /s，最大输出电压为3.0 V，穿过25 /spl ω /，电流振荡为120 mA。

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A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors

A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.

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来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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