1 mA-threshold operation of 1.3 /spl mu/m tensile-strained GaInAsP/InP MQW lasers

Abstract

Threshold current of 1.3 /spl mu/m tensile-strained GaInAsP/InP multiple quantum well (MQW) lasers is investigated. The device has strain-compensated MQW as an active region which consists of -1.15% tensile-strained well and 0.35% compressive-strained barrier. The lowest threshold current of 1.0 mA was obtained in a triple quantum well (3 QW) laser with 120 /spl mu/m-long cavity and high reflective coatings. High temperature operation is also investigated, and the maximum operating temperature T/sub max/ is 120/spl deg/C for a 3 QW laser and 150/spl deg/C for a 5 QW laser.