1.3 /spl μ m垂直腔面发射激光器的热特性

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492397

A. Plais, P. Salet, C. Starck, A. Pinquier, E. Derouin, C. Fortin, T. Fillion, J. Jacquet, F. Brillouet

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摘要

实验证明了1.3 /spl mu/m InGaAsP/InP垂直腔面发射激光器(VCSELs)在室温下的脉冲工作。在p侧和n侧都有介电镜的非埋地结构获得了低阈值电流。讨论了激光结果，指出了热性能的重要性。估计了p-和n-向下安装的激光器的热阻。

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Thermal behaviour of 1.3 /spl mu/m vertical cavity surface emitting laser

Room temperature, pulsed operation of 1.3 /spl mu/m InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and n sides. We discuss the laser results pointing out the importance of thermal properties. The thermal resistance is estimated for p- and n-down mounted lasers.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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