高速复杂耦合应变补偿AlGaInAs/ inp1.5 /spl mu/m DFB激光二极管

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492411

F. Steinhagen, H. Hillmer, R. Losch, W. Schlapp, R. Gobel, E. Kuphal, H. Hartnagel, H. Burkhard

{"title":"高速复杂耦合应变补偿AlGaInAs/ inp1.5 /spl mu/m DFB激光二极管","authors":"F. Steinhagen, H. Hillmer, R. Losch, W. Schlapp, R. Gobel, E. Kuphal, H. Hartnagel, H. Burkhard","doi":"10.1109/ICIPRM.1996.492411","DOIUrl":null,"url":null,"abstract":"The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 /spl mu/m DFB laser diodes\",\"authors\":\"F. Steinhagen, H. Hillmer, R. Losch, W. Schlapp, R. Gobel, E. Kuphal, H. Hartnagel, H. Burkhard\",\"doi\":\"10.1109/ICIPRM.1996.492411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492411\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

介绍了在应变补偿AlGaInAs/InP MBE/MOVPE外延结构上实现高速部分损耗耦合分布反馈(DFB) 1.55 /spl μ m激光二极管的技术和特性。我们观察到低阈值，50 dB的smsr，非常高的-3 dB强度调制(IM)带宽高达23 GHz和良好的大信号行为。

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High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 /spl mu/m DFB laser diodes

The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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