用光谱分辨扫描光致发光分析局域外延的均匀性

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491924

M.F. Nuban, S. Krawczyk, M. Buchheit, R. Blanchet, S. Nagy, B. Robinson, D. A. Thompson, J. Simmons

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引用次数: 1

摘要

本文介绍了具有高空间分辨率(1 /spl μ m /m)的室温光谱分辨扫描光致发光技术，并将其应用于控制局域外延获得的量子阱(QW)结构的组成均匀性和厚度。此外，本文还应用该技术研究了局域气源分子束外延(GSMBE)生长的QW InGaAs/InP异质结构在不同条件下(温度、砷流量)以及条纹宽度和间距的横向均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence

In this contribution, room temperature spectrally resolved scanning photoluminescence technique with high spatial resolution (1 /spl mu/m) is introduced and applied to control the uniformity of the composition and of the thickness of quantum well (QW) structures obtained by localized area epitaxy. Furthermore, this technique is applied here to study lateral uniformity of QW InGaAs/InP heterostructures grown by localized area gas source molecular beam epitaxy (GSMBE) at various conditions (temperature, arsine flow rate) and as a function of stripe width and spacing.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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