Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As异质结构在GaAs上生长晶格松弛，在InP上生长晶格匹配

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491942

M. Haupt, P. Ganser, K. Kohler, S. Emminger, S. Muller, W. Rothemund

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引用次数: 0

摘要

三元Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As异质结构晶格与InP相匹配，为电子和光电器件提供了广泛的应用。该材料体系特别适用于波长在1.3 ~ 1.55 /spl mu/m之间的长波光通信范围。同样有趣的是，在掺杂Al/sub 0.48/ in /sub 0.52/ as /Ga/sub 0.47/ in /sub 0.53/ as异质结构中实现了高电子迁移率和浓度，用于设计高速场效应晶体管。由于InP衬底通常比高质量的GaAs衬底更昂贵，因此似乎需要将Al/sub 0.48/ in /sub 0.52/As/Ga/sub 0.47/ in /sub 0.53/As异质结构的优势与低成本和大型GaAs衬底的可用性结合起来。

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Growth of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice relaxed on GaAs and lattice matched on InP

Ternary Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice matched to InP offer a wide range of applications for electronic and opto-electronic devices. This material system is especially suitable for applications in the long wavelength optical communication range at wavelengths between 1.3 and 1.55 /spl mu/m. Interesting as well is the high electron mobility and concentration achieved in doped Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures for the design of high speed field effect transistors. Since InP substrates are generally more expensive in contrast to the high quality GaAs substrates it seems desirable to combine the advantages of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures with low cost and availability of large GaAs substrates.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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