High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 /spl mu/m DFB laser diodes

Abstract

The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour.