Versatile reactive ion beam etching (RIBE) of InP-based material using CH/sub 4//H/sub 2//Ar chemistry

Abstract

We have investigated RIBE processes for etching InP and related materials using the non-corrosive CH/sub 4//H/sub 2//Ar gas chemistry. The etch rates, surface morphology and etch profiles and have been studied as a function of plasma parameters and gas mixtures. The equipment has been an inductively coupled RF ion gun with a two grid extraction system. Chamber pressure during the process has been about 10/sup -4/ mbar. Sample temperatures depended somewhat on the energy and etch time but were always maintained below 100 C.