用于光学MQW-SPSL器件的InAlAs/InGaAs/InP异质结构的低缺陷和高均匀性固源分子束外延

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491940

K. Panzlaff, T. Feifel, H. Storm

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引用次数: 0

摘要

作者提出了在InP衬底上可重复生长的缺陷密度低至15/cm/sup 2/，均匀性高达+/-0.2%的InGaAs/InAlAs异质结构，适合批量生产。MBE生长的InP及其相关异质结构的结果表明，含p化合物可以达到类似的质量。不同的设备结构，包含InAlAs/InGaAs的spsl和InP已经成长。

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Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices

The authors present the reproducible growth of a defect density as low as 15/cm/sup 2/ and a uniformity as high as +/-0.2% of InGaAs/InAlAs heterostructures on InP substrates which are suitable for mass production. Results on InP and related heterostructures grown by MBE indicate that it is possible to achieve similar quality for P-containing compounds. Different device structures, containing both InAlAs/InGaAs SPSLs and InP have been grown.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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