Growth of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice relaxed on GaAs and lattice matched on InP

Abstract

Ternary Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures lattice matched to InP offer a wide range of applications for electronic and opto-electronic devices. This material system is especially suitable for applications in the long wavelength optical communication range at wavelengths between 1.3 and 1.55 /spl mu/m. Interesting as well is the high electron mobility and concentration achieved in doped Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures for the design of high speed field effect transistors. Since InP substrates are generally more expensive in contrast to the high quality GaAs substrates it seems desirable to combine the advantages of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As heterostructures with low cost and availability of large GaAs substrates.