1.3 /spl mu/m拉伸应变GaInAsP/InP MQW激光器的1 ma阈值操作

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492264

N. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

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引用次数: 0

摘要

研究了1.3 /spl μ m拉伸应变GaInAsP/InP多量子阱(MQW)激光器的阈值电流。该装置以应变补偿的MQW作为有源区域，由-1.15%的拉伸应变井和0.35%的压缩应变势垒组成。在具有120 /spl μ m长腔和高反射涂层的三量子阱(3qw)激光器中获得了最低阈值电流1.0 mA。高温工作也进行了研究，3qw激光器的最高工作温度T/sub max/为120/spl°C, 5qw激光器的最高工作温度为150/spl°C。

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1 mA-threshold operation of 1.3 /spl mu/m tensile-strained GaInAsP/InP MQW lasers

Threshold current of 1.3 /spl mu/m tensile-strained GaInAsP/InP multiple quantum well (MQW) lasers is investigated. The device has strain-compensated MQW as an active region which consists of -1.15% tensile-strained well and 0.35% compressive-strained barrier. The lowest threshold current of 1.0 mA was obtained in a triple quantum well (3 QW) laser with 120 /spl mu/m-long cavity and high reflective coatings. High temperature operation is also investigated, and the maximum operating temperature T/sub max/ is 120/spl deg/C for a 3 QW laser and 150/spl deg/C for a 5 QW laser.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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