采用InAlAs/InGaAs HEMT和再生p-i-n光电二极管的20 gbit /s单片光接收器

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492276

J. Spicher, B. Klepser, M. Beck, A. Rudra, R. Sachot, M. Ilegems

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引用次数: 2

摘要

采用两步生长方法将p-i-n InGaAs光电二极管与InP HEMT前置放大器匹配的InAlAs/InGaAs晶格进行单片集成。首先用MBE培养HEMT结构，然后用CBE再生p-i-n结构。使用CVD-SiO/sub - 2/掩膜层来实现选择性再生被发现会严重降解底层的HEMT层。采用非选择性再生方法，获得了高质量的再生材料，HEMT通道片电阻下降幅度小于10%。利用这种集成工艺制备了带宽为18 GHz的光电接收器。

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A 20-Gbit/s monolithic photoreceiver using InAlAs/InGaAs HEMT's and regrown p-i-n photodiode

A two-step growth approach was used to monolithically integrate p-i-n InGaAs photodiodes with a InAlAs/InGaAs lattice matched to InP HEMT preamplifier. The HEMT structure was first grown by MBE and CBE was used to regrow the p-i-n structure. The use of a CVD-SiO/sub 2/ mask layer to achieve selective regrowth was found to severely degrade the underlying HEMT layers. Using a non selective regrowth method, high quality regrown material was obtained and a decrease of less than 10% was measured for the HEMT channel sheet resistance. With this integration process photoreceivers showing a bandwidth of 18 GHz were fabricated.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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