Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices

Abstract

The authors present the reproducible growth of a defect density as low as 15/cm/sup 2/ and a uniformity as high as +/-0.2% of InGaAs/InAlAs heterostructures on InP substrates which are suitable for mass production. Results on InP and related heterostructures grown by MBE indicate that it is possible to achieve similar quality for P-containing compounds. Different device structures, containing both InAlAs/InGaAs SPSLs and InP have been grown.