InP晶体高压生长的综合模型

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491928

Y. Zou, T. Zhang, E. Nunes, H. Zhang, V. Prasad, F. Ladeinde, M. Naraghi, A. Anselmo, D. Bliss, K. P. Gupta

{"title":"InP晶体高压生长的综合模型","authors":"Y. Zou, T. Zhang, E. Nunes, H. Zhang, V. Prasad, F. Ladeinde, M. Naraghi, A. Anselmo, D. Bliss, K. P. Gupta","doi":"10.1109/ICIPRM.1996.491928","DOIUrl":null,"url":null,"abstract":"We have developed a comprehensive model that accounts for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the InP crystal is simultaneously calculated using the temperature distribution and crystal/melt interface shape obtained from the thermal transport simulation. A sophisticated adaptive grid generation technique together with the curvilinear finite volume discretization and several other high resolution numerical schemes have made it possible to simulate the growth of a compound crystal in a high pressure system.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"79 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A comprehensive model for high pressure growth of InP crystals\",\"authors\":\"Y. Zou, T. Zhang, E. Nunes, H. Zhang, V. Prasad, F. Ladeinde, M. Naraghi, A. Anselmo, D. Bliss, K. P. Gupta\",\"doi\":\"10.1109/ICIPRM.1996.491928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a comprehensive model that accounts for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the InP crystal is simultaneously calculated using the temperature distribution and crystal/melt interface shape obtained from the thermal transport simulation. A sophisticated adaptive grid generation technique together with the curvilinear finite volume discretization and several other high resolution numerical schemes have made it possible to simulate the growth of a compound crystal in a high pressure system.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"79 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们开发了一个综合模型，该模型考虑了浮力和表面张力引起的振荡、层流和湍流;坩埚和晶体旋转引起的强制对流;和复杂的热边界条件。该模型还考虑了磁流体动力学和复杂的辐射热交换。利用热输运模拟得到的温度分布和晶体/熔体界面形状，同时计算了InP晶体中的热弹性应力。一种复杂的自适应网格生成技术，结合曲线有限体积离散和其他几种高分辨率数值格式，使模拟高压系统中化合物晶体的生长成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A comprehensive model for high pressure growth of InP crystals

We have developed a comprehensive model that accounts for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the InP crystal is simultaneously calculated using the temperature distribution and crystal/melt interface shape obtained from the thermal transport simulation. A sophisticated adaptive grid generation technique together with the curvilinear finite volume discretization and several other high resolution numerical schemes have made it possible to simulate the growth of a compound crystal in a high pressure system.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量