发布求助
文献互助 智能选刊 最新文献

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献

筛选
英文 中文
Fault isolation of die level crystal defect failure mechanism through OBIRCH analysis and micro-probing 通过OBIRCH分析和微探针对模具级晶体缺陷失效机理进行故障隔离
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564280
N. S. Lee, F. K. Yong
{"title":"Fault isolation of die level crystal defect failure mechanism through OBIRCH analysis and micro-probing","authors":"N. S. Lee, F. K. Yong","doi":"10.1109/IPFA.2016.7564280","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564280","url":null,"abstract":"Generally, crystal defect is able to induce photon emission event for detection by emission microscopy (EMMI) equipment. However, due to thick, dense metallization and high doped substrate, effective detection by EMMI alone is not always reliable. Thus, further isolation, layout information and verification are required through OBIRCH analysis, CAD navigation and micro-probing sequence respectively.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115708812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Open/resistive defect localization using OBIRCH technique 利用OBIRCH技术定位开/阻缺陷
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564278
Song Jinrong, Fan Diwei, W. Winter, Wen Gaojie, T. Li, Qi Changyan
{"title":"Open/resistive defect localization using OBIRCH technique","authors":"Song Jinrong, Fan Diwei, W. Winter, Wen Gaojie, T. Li, Qi Changyan","doi":"10.1109/IPFA.2016.7564278","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564278","url":null,"abstract":"OBIRCH technique is widely used in locating a leakage related defect. Actually, when combined with current path analysis, OBIRCH can also be an effective method in the localization of an open/resistive defect. This paper presented several real cases to show the application of OBIRCH during the analysis of open/resistive fault.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115879895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recovering contacting interfaces in packaging and in semiconductor devices: Mechanisms and how to handle them in analysis 在封装和半导体器件中恢复接触界面:机制和如何在分析中处理它们
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564310
P. Jacob, C. Pecnik, G. Nicoletti, R. Broennimann
{"title":"Recovering contacting interfaces in packaging and in semiconductor devices: Mechanisms and how to handle them in analysis","authors":"P. Jacob, C. Pecnik, G. Nicoletti, R. Broennimann","doi":"10.1109/IPFA.2016.7564310","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564310","url":null,"abstract":"Several analysis cases reported contact problems on both device and packaged level. However, they recovered upon the attempt to electrically verify them. Further analysis showed that this recovery can be achieved through extremely low ESD effects. Recovery mechanisms and important precautions will be further discussed in order to avoid sudden disappearance of recoverable opens.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125279194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automotive customer returns tilted die resolution 汽车客户退货倾斜模具分辨率
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564257
Andrew C. Sabate, A. Hamid, Dineshwaran Naidu Gunalan
{"title":"Automotive customer returns tilted die resolution","authors":"Andrew C. Sabate, A. Hamid, Dineshwaran Naidu Gunalan","doi":"10.1109/IPFA.2016.7564257","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564257","url":null,"abstract":"Usual Failure Analysis steps may not guarantee the root cause for all failure mechanism type. It is inevitable that the failure may recover after decapsulation or backside grinding for some failure mechanism. The paper aims to discuss analysis approach used in resolving tilted die failure mechanism issue resulting to package re-design eliminating further quality issue with automotive customer.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"428 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115932218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure analysis on corrosion induced Cu-Al bond failures Cu-Al键腐蚀失效分析
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564250
Xuanlong Chen, Liyuan Liu
{"title":"Failure analysis on corrosion induced Cu-Al bond failures","authors":"Xuanlong Chen, Liyuan Liu","doi":"10.1109/IPFA.2016.7564250","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564250","url":null,"abstract":"The failure analysis from the manufacturer could not fully explain the Cu-Al bond open and drift issues in some plastic encapsulated microcircuits. For further investigation, an insight analysis containing chemical deprocessing, cross-sectioning and mechanical opening was performed to define the root cause. Several new findings were observed to support a reasonable cause. The corrosion reaction of intermetallic compounds (IMC) with Cl ions participating was responsible for the anodic bond open failures, cracks grew at the interfaces of Cu ball and IMC, and the re-deposition of Cu ball corrosion resulted in leakage current and drift faults. The results prove that Cu-Al bond is sensitive to H2O and Cl, which play a role as catalysis, and the corrosion tend to happen more easily in anode with bias.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129403123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Dislocation analysis in STI structure of flash memory by advanced 3D TEM sample preparation approach 采用先进的三维透射电镜样品制备方法分析闪存STI结构中的位错
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564291
Chun-Hung Lin, Hsin-Cheng Hsu, W.M. Hsiao, Chiu-Ru Guey, C. Chan, Huai-San Ku, Dun-Fan Zhuang, Banggu Chen, Ru-Hui Lin, Pe-Lin Hsu, Ko-Chun Lee, S. Chung, C. Yeh, N. Lian, Ta-Hone Yang, K.C. Chen
{"title":"Dislocation analysis in STI structure of flash memory by advanced 3D TEM sample preparation approach","authors":"Chun-Hung Lin, Hsin-Cheng Hsu, W.M. Hsiao, Chiu-Ru Guey, C. Chan, Huai-San Ku, Dun-Fan Zhuang, Banggu Chen, Ru-Hui Lin, Pe-Lin Hsu, Ko-Chun Lee, S. Chung, C. Yeh, N. Lian, Ta-Hone Yang, K.C. Chen","doi":"10.1109/IPFA.2016.7564291","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564291","url":null,"abstract":"An advanced 3D sample preparation technique is utilized to prepare TEM lamellas for tracing the partial dislocation site by plan view and observing the details and failure types by further cross-section milling. Primary twins which twin with Σ = 3, {11 1̅} are the major structural defects in STI structure. These instructions give you basic guidelines for preparing your manuscript for IPFA 2013 proceedings.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129151242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure analysis on IDDQ negative current issue IDDQ负电流故障分析
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564274
Ismail Hashim
{"title":"Failure analysis on IDDQ negative current issue","authors":"Ismail Hashim","doi":"10.1109/IPFA.2016.7564274","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564274","url":null,"abstract":"This paper describes analysis method on the negative current IDDQ failure mode. By using Visual C++ programmable script to control the steps of IDDQ measurement, circuit debugging is possible. This method helps on the findings of threshold voltage shifted on Disable pin which crucial for IDDQ test mode of that particular device.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130831279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A review on degradation physics of high power LEDs in outdoor applications 大功率led在户外应用中的降解物理研究进展
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564322
Cher MingTan, Preetpal Singh
{"title":"A review on degradation physics of high power LEDs in outdoor applications","authors":"Cher MingTan, Preetpal Singh","doi":"10.1109/IPFA.2016.7564322","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564322","url":null,"abstract":"High power LEDs are replacing the traditional lighting sources due its wide range of advantages. However, their reliability remain a concern due to the lack of understanding in terms of their failure mechanisms and related reliability studies, especially in outdoor applications. In this work, a comprehensive review on the study of humidity and high temperature based degradation mechanisms for high power LEDs is reported. The failure mechanism is found to vary at various humidity levels as well as during their life cycles. This renders the existing lifetime prediction models inapplicable for high power LEDs.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115440562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DdProber: Self-sensing AFM type Nano-prober ddprobe:自传感AFM型纳米探针
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564283
R. Shioda, Y. Amano, K. Ikezawa, Y. Nakamura, T. Kasahara
{"title":"DdProber: Self-sensing AFM type Nano-prober","authors":"R. Shioda, Y. Amano, K. Ikezawa, Y. Nakamura, T. Kasahara","doi":"10.1109/IPFA.2016.7564283","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564283","url":null,"abstract":"Nano-prober has the increasing importance for advanced semiconductor device process. Conventional SEM type Nano-prober face the problems, device degradation with electron bombardment and resolution limit. The AFM Nano-prober can work in air, so it is so easy to use for its operation. We report the new type AFM Nano-prober that applied the self-sensing type AFM. This method has the simple structure and easy to use. In the case of Nano-prober that constructed with multiple AFM, this simple method is best choice in this purpose.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124131194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Case study of flash memory failure analysis for page erase fail 页擦除失败的快闪记忆体失效分析案例研究
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564241
M. Guo, M. Masuda, Y. Che, C. Qi, X. Z. Wang, X. Li, R. Chen, H. R. Di, L. Shan
{"title":"Case study of flash memory failure analysis for page erase fail","authors":"M. Guo, M. Masuda, Y. Che, C. Qi, X. Z. Wang, X. Li, R. Chen, H. R. Di, L. Shan","doi":"10.1109/IPFA.2016.7564241","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564241","url":null,"abstract":"Failure Analysis (FA) consists of fault verification, isolation, defect tracing, characterization and physical analysis. Flash memory is widely used in data storage. High density cell array makes flash memory prone to defects. In this paper, a NOR flash page failure case was studied. The failed page, consisting of 8 word lines and 512 bytes, cannot be erased. Light emission could help isolate the defect location from horizontal level, but could not tell which layer the defect was at or what kind of defect it was. So rigorous failure analysis need to be used to narrow the fault location step by step, and eventually found the failure root cause.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123533847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信