Case study of flash memory failure analysis for page erase fail

M. Guo, M. Masuda, Y. Che, C. Qi, X. Z. Wang, X. Li, R. Chen, H. R. Di, L. Shan
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Abstract

Failure Analysis (FA) consists of fault verification, isolation, defect tracing, characterization and physical analysis. Flash memory is widely used in data storage. High density cell array makes flash memory prone to defects. In this paper, a NOR flash page failure case was studied. The failed page, consisting of 8 word lines and 512 bytes, cannot be erased. Light emission could help isolate the defect location from horizontal level, but could not tell which layer the defect was at or what kind of defect it was. So rigorous failure analysis need to be used to narrow the fault location step by step, and eventually found the failure root cause.
页擦除失败的快闪记忆体失效分析案例研究
故障分析包括故障验证、故障隔离、缺陷跟踪、故障表征和物理分析。闪存在数据存储中得到了广泛的应用。高密度单元阵列使得闪存容易出现缺陷。本文对一个NOR flash页面失效案例进行了研究。失败的页面由8行字和512字节组成,无法擦除。光发射可以从水平面上隔离缺陷的位置,但不能分辨出缺陷在哪一层或者是哪一种缺陷。因此需要通过严格的故障分析,逐步缩小故障定位范围,最终找到故障的根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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