Chun-Hung Lin, Hsin-Cheng Hsu, W.M. Hsiao, Chiu-Ru Guey, C. Chan, Huai-San Ku, Dun-Fan Zhuang, Banggu Chen, Ru-Hui Lin, Pe-Lin Hsu, Ko-Chun Lee, S. Chung, C. Yeh, N. Lian, Ta-Hone Yang, K.C. Chen
{"title":"采用先进的三维透射电镜样品制备方法分析闪存STI结构中的位错","authors":"Chun-Hung Lin, Hsin-Cheng Hsu, W.M. Hsiao, Chiu-Ru Guey, C. Chan, Huai-San Ku, Dun-Fan Zhuang, Banggu Chen, Ru-Hui Lin, Pe-Lin Hsu, Ko-Chun Lee, S. Chung, C. Yeh, N. Lian, Ta-Hone Yang, K.C. Chen","doi":"10.1109/IPFA.2016.7564291","DOIUrl":null,"url":null,"abstract":"An advanced 3D sample preparation technique is utilized to prepare TEM lamellas for tracing the partial dislocation site by plan view and observing the details and failure types by further cross-section milling. Primary twins which twin with Σ = 3, {11 1̅} are the major structural defects in STI structure. These instructions give you basic guidelines for preparing your manuscript for IPFA 2013 proceedings.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dislocation analysis in STI structure of flash memory by advanced 3D TEM sample preparation approach\",\"authors\":\"Chun-Hung Lin, Hsin-Cheng Hsu, W.M. Hsiao, Chiu-Ru Guey, C. Chan, Huai-San Ku, Dun-Fan Zhuang, Banggu Chen, Ru-Hui Lin, Pe-Lin Hsu, Ko-Chun Lee, S. Chung, C. Yeh, N. Lian, Ta-Hone Yang, K.C. Chen\",\"doi\":\"10.1109/IPFA.2016.7564291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An advanced 3D sample preparation technique is utilized to prepare TEM lamellas for tracing the partial dislocation site by plan view and observing the details and failure types by further cross-section milling. Primary twins which twin with Σ = 3, {11 1̅} are the major structural defects in STI structure. These instructions give you basic guidelines for preparing your manuscript for IPFA 2013 proceedings.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dislocation analysis in STI structure of flash memory by advanced 3D TEM sample preparation approach
An advanced 3D sample preparation technique is utilized to prepare TEM lamellas for tracing the partial dislocation site by plan view and observing the details and failure types by further cross-section milling. Primary twins which twin with Σ = 3, {11 1̅} are the major structural defects in STI structure. These instructions give you basic guidelines for preparing your manuscript for IPFA 2013 proceedings.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
