Dislocation analysis in STI structure of flash memory by advanced 3D TEM sample preparation approach

Abstract

An advanced 3D sample preparation technique is utilized to prepare TEM lamellas for tracing the partial dislocation site by plan view and observing the details and failure types by further cross-section milling. Primary twins which twin with Σ = 3, {11 1̅} are the major structural defects in STI structure. These instructions give you basic guidelines for preparing your manuscript for IPFA 2013 proceedings.