发布求助
文献互助 智能选刊 最新文献

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献

筛选
英文 中文
Combining current imaging, EBIC/EBAC, and electrical probing for fast and reliable in situ electrical fault isolation 结合电流成像、EBIC/EBAC和电气探测，实现快速可靠的电气故障原位隔离
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564288
S. Kleindiek, K. Schock, A. Rummel, Michael Zschomack, P. Limbecker, Andreas Meyer, M. Kemmler
{"title":"Combining current imaging, EBIC/EBAC, and electrical probing for fast and reliable in situ electrical fault isolation","authors":"S. Kleindiek, K. Schock, A. Rummel, Michael Zschomack, P. Limbecker, Andreas Meyer, M. Kemmler","doi":"10.1109/IPFA.2016.7564288","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564288","url":null,"abstract":"Using a compact nanoprobing setup comprising eight probe tips attached to piezo-driven micromanipulators, various techniques for fault isolation are performed on 28 nm samples inside an SEM. The recently implemented Current Imaging technique is used to quickly image large arrays of contacts providing a means of locating faults.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133956298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Time-of-Flight Secondary Ion Mass Spectrometry profiling for arsenic in silicon dioxide matrix 二氧化硅基体中砷的飞行时间二次离子质谱分析
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564258
H. Teo, Yun Wang, Z. Mo, S. Zhao
{"title":"Time-of-Flight Secondary Ion Mass Spectrometry profiling for arsenic in silicon dioxide matrix","authors":"H. Teo, Yun Wang, Z. Mo, S. Zhao","doi":"10.1109/IPFA.2016.7564258","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564258","url":null,"abstract":"This paper showed that <sup>75</sup>As was a better analyte species than <sup>28</sup>Si<sup>75</sup>As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of <sup>75</sup>As showed 1 order higher than <sup>28</sup>Si <sup>75</sup>As in silicon dioxide matrix. The average RSF for <sup>75</sup>As in silicon dioxide was determined to be 5.62E20 and lower variation of <sup>75</sup>As RSF was observed.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122079236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale homogeneity and degradation process of two dimensional atomically thin hexagonal boron nitride dielectric stacks 二维原子薄六方氮化硼介电层的纳米均匀性和降解过程
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564323
Yanfeng Ji, Chengbin Pan, F. Hui, Yuanyuan Shi, Lanlan Jiang, Na Xiao, E. Grustan-gutierrez, L. Larcher, M. Lanza
{"title":"Nanoscale homogeneity and degradation process of two dimensional atomically thin hexagonal boron nitride dielectric stacks","authors":"Yanfeng Ji, Chengbin Pan, F. Hui, Yuanyuan Shi, Lanlan Jiang, Na Xiao, E. Grustan-gutierrez, L. Larcher, M. Lanza","doi":"10.1109/IPFA.2016.7564323","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564323","url":null,"abstract":"In this paper we analyze the reliability of atomically thin hexagonal boron nitride (A-BN) dielectric stacks subjected to electrical stresses. The 2D insulating stacks are grown by chemical vapor deposition, meaning that (unlike exfoliated nanosheets) they can cover large areas and are suitable for the fabrication of scalable devices using photolithography tools. By comparing HfO2 and A-BN stacks with similar equivalent oxide thickness we find that the 2D dielectric shows a striking stable conduction when subjected to sequences of ramped voltage stresses, indicating that it is much more stable versus electrical-field-induced defects. These results point A-BN as superb dielectric for electronic devices.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124792095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determining the root cause of a neighbouring-cell-interaction-induced latch-up failure event 确定相邻细胞相互作用引起的闭锁失败事件的根本原因
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564247
H. Ho, W. W. Lau, S. Goh, B. Yeoh, M. Seungje, R. He, J. Lam
{"title":"Determining the root cause of a neighbouring-cell-interaction-induced latch-up failure event","authors":"H. Ho, W. W. Lau, S. Goh, B. Yeoh, M. Seungje, R. He, J. Lam","doi":"10.1109/IPFA.2016.7564247","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564247","url":null,"abstract":"It has always been a challenge to identify the failure mechanism of electrical overstress and latch-up failures due to misleading failure modes observed from electrical fault isolation. A Latch-up failure event involving an I/O cell of a SoC device is investigated. The root cause is determined by combining failure analysis, layout and commonality studies. It is found that the presence of abutting pad cells guardrings is critical for latch-up immunity.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128783779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation assisting EMMI technical to locate defect on capacitor in integrated circuit failure analysis 仿真辅助EMMI技术在集成电路故障分析中定位电容缺陷
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564287
Gaojie Wen, Li Tian, Diwei Fan, Jinrong Song, Jun Ren, Dong Wang, Xiaocui Li
{"title":"Simulation assisting EMMI technical to locate defect on capacitor in integrated circuit failure analysis","authors":"Gaojie Wen, Li Tian, Diwei Fan, Jinrong Song, Jun Ren, Dong Wang, Xiaocui Li","doi":"10.1109/IPFA.2016.7564287","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564287","url":null,"abstract":"Since the structure and function of IC (Integrated Circuit) is becoming complicated, locating the defect precisely is facing more challenges. Non-destructive analysis strategy would be much more important than ever before. This paper would present an efficient strategy to locate the defect on capacitor with simulation EMMI analysis. This non-destructive strategy can be considered when meet the output signal failed which with complicated feedback circuit.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130007962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Innovative fault isolation analysis technique to identify failure mechanism on recovering device failure 创新故障隔离分析技术，识别故障机理，恢复设备故障
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564320
Izhar Helmi Ahmad, Anton Van Alferez, Y. M. Yusof
{"title":"Innovative fault isolation analysis technique to identify failure mechanism on recovering device failure","authors":"Izhar Helmi Ahmad, Anton Van Alferez, Y. M. Yusof","doi":"10.1109/IPFA.2016.7564320","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564320","url":null,"abstract":"Failure analysis (FA) plays an important role in the semiconductor industry as the process technology and new packaging is continuously improved. Missed out failure mechanisms and device recovery is a growing challenge in the FA field. In this paper, a new FA method is presented. A precise backside Fault Isolation was utilized in combination with Cross-section and Focused Ion Beam to uncover the Failure mechanism. The application of this method will be discussed on two case studies with different failure mechanisms.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126404529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on fab environment induced Al and Cu metal corrosion by TEM failure analysis 晶圆厂环境诱发铝和铜金属腐蚀的TEM失效分析研究
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564331
Binghai Liu, Z. Mai, J. Lam, Zhao Yuzhe, Tan Pik Kee
{"title":"Study on fab environment induced Al and Cu metal corrosion by TEM failure analysis","authors":"Binghai Liu, Z. Mai, J. Lam, Zhao Yuzhe, Tan Pik Kee","doi":"10.1109/IPFA.2016.7564331","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564331","url":null,"abstract":"Contamination-free manufacturing environment is essential for semiconductor wafer fabs. Any contaminants from production line such as process tools and chambers need to be closely monitored and well controlled so as to avoid the direct exposure of the production wafers to these contaminants. In this paper, we discussed two typical metal corrosion issues induced by wafer fab environmental contamination, i.e. aluminum (Al) metal corrosion by fluorine (F)/chlorine (Cl), copper (Cu) metal corrosion by iodine (I). We presented detailed transmission electron microscope (TEM) analysis of the defects related to metal corrosion, helping fabs to identify the root cause and to take corrective actions.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127909485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Case study of leakage/short on PCB after biased-HAST 偏置hast后PCB上的泄漏/短路案例研究
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564262
Ke-Ying Lin, Sharon Chen
{"title":"Case study of leakage/short on PCB after biased-HAST","authors":"Ke-Ying Lin, Sharon Chen","doi":"10.1109/IPFA.2016.7564262","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564262","url":null,"abstract":"After HAST of WLCSP devices mounted on PCB, several short and leakage failures were observed. Non-destructive technique, lock-in thermography (LIT) was applied to localize the fault on PCB. Thereafter, physical failure analysis (PFA) was performed. It revealed solder contamination between the solder bumps of PCB as cause of the failures.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124480623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure analysis of LSI interconnection by terahertz time-domain reflectometry 用太赫兹时域反射法分析LSI互连的失效
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564290
M. Hashimoto, T. Okada, S. Nishina, T. Ataka, M. Shinohara, Yasuhide Maehara, A. Irisawa, M. Imamura
{"title":"Failure analysis of LSI interconnection by terahertz time-domain reflectometry","authors":"M. Hashimoto, T. Okada, S. Nishina, T. Ataka, M. Shinohara, Yasuhide Maehara, A. Irisawa, M. Imamura","doi":"10.1109/IPFA.2016.7564290","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564290","url":null,"abstract":"It is getting significant to identify the fault location in advanced IC packaging technology. However, challenges have been posed to precisely determine the fault location in the failure analysis process, which is difficult to be handled by the conventional electronic based time domain reflectometry. In this work, we developed a time-domain reflectometry technology with extremely small distance-to-fault measurement error less than 50 μm, which includes X-ray length measuring error, by introducing pulsed terahertz probing signal to Quad Flat Package.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123349595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Differential C-AFM system for semiconductor failure analysis 用于半导体失效分析的差分C-AFM系统
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI: 10.1109/IPFA.2016.7564319
X. Zheng, Y. Han, P.H. Seah, G. S. Lee, Kheaw Chung Chng
{"title":"Differential C-AFM system for semiconductor failure analysis","authors":"X. Zheng, Y. Han, P.H. Seah, G. S. Lee, Kheaw Chung Chng","doi":"10.1109/IPFA.2016.7564319","DOIUrl":"https://doi.org/10.1109/IPFA.2016.7564319","url":null,"abstract":"Conductive Atomic Force Microscope (C-AFM) has become an indispensable tool in semiconductor failure analysis. In this work, a Differential C-AFM system was developed, which is able to simultaneously isolate fault locations in p-dope, n-doped & polysilicon regions more efficiently within one scan. Furthermore, due to its AC nature, this technique can also be applied in C-AFM analysis on silicon-on-insulator (SOI) devices.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信