二氧化硅基体中砷的飞行时间二次离子质谱分析

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564258

H. Teo, Yun Wang, Z. Mo, S. Zhao

{"title":"二氧化硅基体中砷的飞行时间二次离子质谱分析","authors":"H. Teo, Yun Wang, Z. Mo, S. Zhao","doi":"10.1109/IPFA.2016.7564258","DOIUrl":null,"url":null,"abstract":"This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher than 28Si 75As in silicon dioxide matrix. The average RSF for 75As in silicon dioxide was determined to be 5.62E20 and lower variation of 75As RSF was observed.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Time-of-Flight Secondary Ion Mass Spectrometry profiling for arsenic in silicon dioxide matrix\",\"authors\":\"H. Teo, Yun Wang, Z. Mo, S. Zhao\",\"doi\":\"10.1109/IPFA.2016.7564258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher than 28Si 75As in silicon dioxide matrix. The average RSF for 75As in silicon dioxide was determined to be 5.62E20 and lower variation of 75As RSF was observed.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564258\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

结果表明，在二氧化硅中，75As比28Si75As更适合于飞行时间二次离子质谱法的精确定量分析。与硅基体相反，在二氧化硅基体中，75As的离子产率比28Si 75As高出1个数量级。测定了二氧化硅中75As的平均RSF为5.62E20，并且观察到75As RSF的变化较小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Time-of-Flight Secondary Ion Mass Spectrometry profiling for arsenic in silicon dioxide matrix

This paper showed that ⁷⁵As was a better analyte species than ²⁸Si⁷⁵As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of ⁷⁵As showed 1 order higher than ²⁸Si ⁷⁵As in silicon dioxide matrix. The average RSF for ⁷⁵As in silicon dioxide was determined to be 5.62E20 and lower variation of ⁷⁵As RSF was observed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量