用于半导体失效分析的差分C-AFM系统

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564319

X. Zheng, Y. Han, P.H. Seah, G. S. Lee, Kheaw Chung Chng

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引用次数: 2

摘要

导电原子力显微镜(C-AFM)已成为半导体失效分析中不可缺少的工具。在这项工作中，开发了一种差分C-AFM系统，该系统能够在一次扫描中更有效地同时隔离p-掺杂，n-掺杂和多晶硅区域的故障位置。此外，由于其交流特性，该技术也可用于C-AFM分析绝缘体上硅(SOI)器件。

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Differential C-AFM system for semiconductor failure analysis

Conductive Atomic Force Microscope (C-AFM) has become an indispensable tool in semiconductor failure analysis. In this work, a Differential C-AFM system was developed, which is able to simultaneously isolate fault locations in p-dope, n-doped & polysilicon regions more efficiently within one scan. Furthermore, due to its AC nature, this technique can also be applied in C-AFM analysis on silicon-on-insulator (SOI) devices.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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