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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings最新文献

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Electrical generation of terahertz electromagnetic radiations from two-dimensional semiconductor systems at zero and quantizing magnetic fields 二维半导体系统在零磁场和量子化磁场下产生太赫兹电磁辐射
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610156
W. Xu, C. Zhang
{"title":"Electrical generation of terahertz electromagnetic radiations from two-dimensional semiconductor systems at zero and quantizing magnetic fields","authors":"W. Xu, C. Zhang","doi":"10.1109/COMMAD.1996.610156","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610156","url":null,"abstract":"We present a theoretical study on the electrical generation of terahertz (THz) electromagnetic radiation in AlGaAs/GaAs-based two-dimensional semiconductor systems at zero and quantizing magnetic fields. The intensity of THz blackbody radiation emission and THz cyclotron emission has been calculated as a function of photon frequency and electron temperature. We consider that the electrons are heated by pulsed electric fields and that the hot-electron interactions with electromagnetic fields are mediated by electron-phonon scattering.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129721157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-efficiency high-speed Ga/sub 1-x/Al/sub x/As light-emitting diode characteristics 高效高速Ga/sub -x/Al/sub -x/ As发光二极管特性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610075
Tingqing Zhang, T. Sugeta, M. Takemura, P. Edwards, W. Cheung, P. Lynam
{"title":"High-efficiency high-speed Ga/sub 1-x/Al/sub x/As light-emitting diode characteristics","authors":"Tingqing Zhang, T. Sugeta, M. Takemura, P. Edwards, W. Cheung, P. Lynam","doi":"10.1109/COMMAD.1996.610075","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610075","url":null,"abstract":"We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The external quantum efficiency and the modulation bandwidth are measured as functions of drive current, hole concentration in the active region, and ambient temperature, respectively. Output power of 23 mW, external quantum efficiency of 30% and modulation bandwidth of 50 MHz were measured at room temperature and 50 mA drive current (60 A/cm/sup 2/ current density). The power-bandwidth product is the highest among those reported for Ga/sub 1-x/Al/sub x/As light-emitting diodes.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131324754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid-phase epitaxy of Al/sub x/Ga/sub (1-x/)As: kinetics as a function of composition Al/sub x/Ga/sub (1-x/)As的固相外延:动力学与组成的函数关系
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610090
S. Hogg, D. Llewellyn, H. Tan, M. Ridgway
{"title":"Solid-phase epitaxy of Al/sub x/Ga/sub (1-x/)As: kinetics as a function of composition","authors":"S. Hogg, D. Llewellyn, H. Tan, M. Ridgway","doi":"10.1109/COMMAD.1996.610090","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610090","url":null,"abstract":"The solid-phase epitaxy (SPE) of amorphised Al/sub x/Ga/sub (1-x/)As alloys, with x=0-0.46, has been investigated at temperatures over the range 220-310/spl deg/C. Samples were implanted with /sup 74/Ge ions at 200 keV and then annealed. Time resolved reflectivity (TRR) and Rutherford backscattering spectrometry in combination with channeling (RBS/C) were used to deduce the recrystallisation kinetics as a function of Al content. Residual disorder was characterised with RBS/C and cross-sectional transmission electron microscopy (XTEM). The SPE rate exhibited an Arrhenius temperature dependence at all compositions. The activation energy (/spl sim/1.60 eV) and the pre-exponential (on average 4.0/spl times/10/sup 15/ /spl Aring//s) for the process varied little with composition. At all compositions, single crystal regrowth was observed over 200-400 /spl Aring/ followed by the onset of twinning. RBS/C minimum yield values, indicative of the twinned volume fraction, were /spl sim/0.90 independent of Al content.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121671132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing 采用脉冲阳极氧化和快速热退火技术制备具有侧壁量子阱的v槽GaAs/AlGaAs量子线
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610106
Y. Kim, S. Yuan, R. Leon, A. Clark, C. Jagadish, M. Johnston, P. Burke, M. Gal, J. Zou, D. Cockayne, M. Phillips, M. A. Kalceff
{"title":"V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing","authors":"Y. Kim, S. Yuan, R. Leon, A. Clark, C. Jagadish, M. Johnston, P. Burke, M. Gal, J. Zou, D. Cockayne, M. Phillips, M. A. Kalceff","doi":"10.1109/COMMAD.1996.610106","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610106","url":null,"abstract":"A novel impurity-free interdiffusion (IFID) technique, namely, pulsed anodization and subsequent rapid thermal annealing, is applied to study GaAs/AlGaAs multiple quantum wires grown by metalorganic chemical vapour deposition on V-grooved GaAs substrates. Photoluminescence (PL) and cathodoluminescence (CL) emissions are observed from GaAs quantum wires. IFID increases both carrier confinement in quantum wires and the efficiency of excess carrier transfer from sidewall quantum wells to quantum wires, where the excess carriers are generated either by optical pumping (PL) or electron pumping (CL).","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116448871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of step-doped channel heterostructure field-effect transistor 阶梯掺杂沟道异质结构场效应晶体管的研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610120
Wen-Chau Liu, L. Laih, J. Tsai, Jing-Yuh Chen, Wei-Chou Wang, Po-Hung Lin
{"title":"Investigation of step-doped channel heterostructure field-effect transistor","authors":"Wen-Chau Liu, L. Laih, J. Tsai, Jing-Yuh Chen, Wei-Chou Wang, Po-Hung Lin","doi":"10.1109/COMMAD.1996.610120","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610120","url":null,"abstract":"Two kinds of heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile have been fabricated and demonstrated. For the 1/spl times/100 /spl mu/m/sup 2/ gated dimension, the maximum drain saturation currents were 735 and 675 mA/mm, the maximum transconductances 200 and 232 mS/mm, the gate breakdown voltages 15 V and 12 V, and the wide gate voltage swing 3.3 and 2.6 V with transconductance g/sub m/ higher than 150 mS/mm. A simple model is employed to analyze the performance of threshold voltage V/sub T/ and values of -3.7 and -1.8 V are obtained. These good performances show that the SDCFET has a good potential for high-speed, high-power circuit applications.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116317917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analysis of intermodulation nulling in HEMTs hemt互调零化分析
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610112
G. Qu, A. Parker
{"title":"Analysis of intermodulation nulling in HEMTs","authors":"G. Qu, A. Parker","doi":"10.1109/COMMAD.1996.610112","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610112","url":null,"abstract":"This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127187558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The application of OIM and EBIC techniques to the characterization of polycrystalline silicon films OIM和EBIC技术在多晶硅薄膜表征中的应用
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610049
C. Chou, Y. Huang, Z. Shi
{"title":"The application of OIM and EBIC techniques to the characterization of polycrystalline silicon films","authors":"C. Chou, Y. Huang, Z. Shi","doi":"10.1109/COMMAD.1996.610049","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610049","url":null,"abstract":"The orientation imaging microscopy (OIM) has been routinely used to characterize pc-Si thin film materials for photovoltaic applications. This technique has also been used jointly with electron beam induced current (EBIC) technique to study the relations of grain boundary structure and their recombination strengths. In this paper the technique is described and examples have been given. Evidence has been presented that the /spl Sigma/3 grain boundaries can be strong recombination centres depending on the grain boundary planes. Existing results in the literature need to be re-examined.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High quality GaAs/InGaAs/AlGaAs vertical-cavity surface-emitting lasers grown at a constant temperature by molecular beam epitaxy 用分子束外延在恒温条件下生长高质量的GaAs/InGaAs/AlGaAs垂直腔面发射激光器
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610068
Z.H. Zhang, C.Y. Li
{"title":"High quality GaAs/InGaAs/AlGaAs vertical-cavity surface-emitting lasers grown at a constant temperature by molecular beam epitaxy","authors":"Z.H. Zhang, C.Y. Li","doi":"10.1109/COMMAD.1996.610068","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610068","url":null,"abstract":"Low threshold current GaAs/InGaAs vertical cavity surface emitting lasers could be successfully grown by molecular beam epitaxy at a fixed substrate temperature of 560/spl deg/C which is compromised for InGaAs and AlGaAs materials, The thickness of each pair of layers in the device structures could be easily controlled using an infrared pyrometer system. Lasers with a three quantum well active region grown under such conditions show a threshold current density of 310 A cm/sup -2/ and a maximum output power of 0.8 mW from a 15/spl times/15 /spl mu/m/sup 2/ device at room temperature continuous wave operation.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127494762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of LT MBE GaAs for photomixing up to THz frequencies LT MBE GaAs在太赫兹频率下的光混合特性
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610072
P. Kordos, F. Ruders, M. Marso, A. Forster
{"title":"Properties of LT MBE GaAs for photomixing up to THz frequencies","authors":"P. Kordos, F. Ruders, M. Marso, A. Forster","doi":"10.1109/COMMAD.1996.610072","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610072","url":null,"abstract":"The properties of low-temperature-grown MBE GaAs layers, as-grown and annealed (T/sub g/=200-420/spl deg/C, T/sub a/=600/spl deg/C), are evaluated in relation to the performance of a photomixer. In all annealed layers the photocarrier life time /spl tau//sub e-h/= 0.20-0.25 ps is found. Microwave capacitance of MSM structures is measured and RC-limited bandwidth of 460 GHz follows from /spl tau//sub e-h/ and /spl tau//sub RC/ evaluation. The carrier mobility in as-grown and annealed layers increases from /spl mu//sub H//spl les/1 cm/sup 2//V s to SI GaAs bulk values with increase in the growth temperature. The breakdown field in annealed layers is /spl cong/280 kV/cm if grown at 200-250/spl deg/C and decreases to /spl cong/40 kV/cm if T/sub g/ increases to 420/spl deg/C. Thus, photomixer conversion efficiency /spl epsiv//sub r/ can be optimized.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130376104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optoelectronic determination of density of states in variable to wide band-gap materials 可变到宽禁带材料中态密度的光电测定
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610139
J. Singh
{"title":"Optoelectronic determination of density of states in variable to wide band-gap materials","authors":"J. Singh","doi":"10.1109/COMMAD.1996.610139","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610139","url":null,"abstract":"Present paper describes first time use of an opto-electronic technique consisting of a joint measurement of electrical and optical field dependent conduction. The technique is noteworthy in its simplicity and completeness for determining the optoelectronic density. For illustration /spl alpha/-Si:H:N is considered as a prototype of a variable to wide gap material.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131647909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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