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Structural and electrical properties of undoped GaAs grown by MOCVD MOCVD生长未掺杂GaAs的结构和电学性质
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610143
P. Modak, M. Kumar Hudait, S. Hardikar, S. .. Krupanidhi
{"title":"Structural and electrical properties of undoped GaAs grown by MOCVD","authors":"P. Modak, M. Kumar Hudait, S. Hardikar, S. .. Krupanidhi","doi":"10.1109/COMMAD.1996.610143","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610143","url":null,"abstract":"The present paper describes the results from the growth of undoped epitaxial GaAs by low pressure Metal Organic Chemical Vapor Deposition (MOCVD) and its structural and electrical properties. The growth temperature and pressure were 700/spl deg/C and 100 Torr, respectively. Growth was carried out at different V/III ratios and hydrogen flow rates. Epilayers thus grown were shown to have uniform thickness, smooth surface, crystalline structure, stoichiometric and low background impurity concentration. The increasing V/III ratio resulted in the p-to n-type transformation of the epilayers. With increasing hydrogen flow rate, the background carrier concentration was decreased. Hall mobility of 90,000 cm/sup 2/ V/sup -1/ s/sup -1/ at 77 K for a carrier concentration of 1/spl times/10/sup 15/ cm/sup -3/ was obtained.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"52 15","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131609661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunnelling diode InGaAs/AlAs/InP谐振隧穿二极管的设计、制造与建模
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610123
C. Leung, D. Skellern
{"title":"Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunnelling diode","authors":"C. Leung, D. Skellern","doi":"10.1109/COMMAD.1996.610123","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610123","url":null,"abstract":"We have designed and fabricated In/sub 0.53/Ga/sub 0.47/As/AlAs resonant tunnelling diodes on an InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V, respectively, in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0/spl times/10/sup 4/ A/cm/sup 2/ and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental results.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124082384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures 量子受限结构中电场相关吸收系数的测量方法
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610128
J. Siliquini, M.G. Xu, G.A. Umana Membreno, A. Clark, J. Dell
{"title":"Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures","authors":"J. Siliquini, M.G. Xu, G.A. Umana Membreno, A. Clark, J. Dell","doi":"10.1109/COMMAD.1996.610128","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610128","url":null,"abstract":"A review of methods measuring the electric-field-dependent absorption coefficient in quantum confined structures is presented. The methods proposed are based on an approximate modeling of a thin film structure which takes into account the reflections at the air-semiconductor interfaces and interference effects within the structure. It is shown that determination of the absorption coefficient from the measured photocurrent and transmitted power is the most robust against measurement errors and easiest to implement for complete modulator structures.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114352527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelling, fabrication and characterisation of polymer antiresonant reflecting optical waveguides 聚合物抗谐振反射光波导的建模、制造和表征
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610161
A. Mitchell, A. Kuver, H. Sun, M. Austin
{"title":"Modelling, fabrication and characterisation of polymer antiresonant reflecting optical waveguides","authors":"A. Mitchell, A. Kuver, H. Sun, M. Austin","doi":"10.1109/COMMAD.1996.610161","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610161","url":null,"abstract":"Interest in the application of polymers to integrated optics is growing steadily. The advantages of low cost and simple and quick preparation make options for wave-guiding involving polymers very attractive. A theoretical model is used to design optimum anti-resonant reflecting optical waveguides (ARROW) structures using polymer materials. We demonstrate an ARROW structure using spin deposited polymethyl methacrylate and polyimide multilayers. The processing of this device was monitored using reflectance and analysed using prism coupling.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125577463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Diffusion and native defects in GaAs 砷化镓的扩散与原生缺陷
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610084
R. M. Cohen
{"title":"Diffusion and native defects in GaAs","authors":"R. M. Cohen","doi":"10.1109/COMMAD.1996.610084","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610084","url":null,"abstract":"Native defects, i.e., vacancies and interstitials, are responsible for controlling the diffusion of atoms in GaAs. Three classes of experimental design are available to probe native defects: equilibrium, weak nonequilibrium, and strong nonequilibrium. The necessary and sufficient conditions required to define and quickly bring the native defect concentrations to their equilibrium values are discussed. Experimental results are presented which show that native defect equilibrium can be approximated in practice, and used to determine that interdiffusion of either Al or In occurs via a Ga vacancy, with a charge of -1, in both n- and p-type GaAs. Strong nonequilibrium which applies when substantial mass transfer occurs, is of little help in understanding diffusion. Weak nonequilibrium corresponds to a perturbation in the equilibrium concentration of one native defect. Such experiments have been used to show that positively charged Zn and Ga interstitials are the first defects in the crystal to equilibrate with the ambient vapor.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126646496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates GaAs衬底生长ZnSe层的应变应变和界面结构
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610154
Y. Zhang, B. Usher, J. Riley, X. Huang, J. Zou, R. Leckey, D. Wolfframm
{"title":"Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates","authors":"Y. Zhang, B. Usher, J. Riley, X. Huang, J. Zou, R. Leckey, D. Wolfframm","doi":"10.1109/COMMAD.1996.610154","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610154","url":null,"abstract":"Most II-VI device structures are grown on GaAs substrates. The lattice mismatch which exists between the epilayer and substrate consequently induces a strain in the epilayer. By relating X-ray measurements of distortion and misorientation of the epilayer unit cell to the defect structure at the ZnSe/GaAs interface, we are able to propose a model for the strain relaxation process in the ZnSe/GaAs system.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125156900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion implantation for wavelength-shifting and quantum wire lasers 移波长和量子线激光器的离子注入
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610085
H. Tan, Y. Kim, C. Jagadish
{"title":"Ion implantation for wavelength-shifting and quantum wire lasers","authors":"H. Tan, Y. Kim, C. Jagadish","doi":"10.1109/COMMAD.1996.610085","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610085","url":null,"abstract":"Ion implantation is used to induce intermixing in quantum well structures and hence modify the shape and the excitonic levels of the wells. Broad-area GaAs quantum well lasers lasing at different wavelengths have been fabricated using this technique. Up to 5 nm shift in the wavelength is observed corresponding to an implantation dose of 1/spl times/10/sup 15/ H/cm/sup 2/ without any degradation in the current threshold characteristics. A self-aligned dual implantation method is proposed to create current confining regions and selectively disorder the side walls in quantum wire laser structures grown on non-planar substrates.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122748798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of piezoelectric effect in GaN thin films using a modified Michelson interferometer 用改进的迈克尔逊干涉仪研究GaN薄膜中的压电效应
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610137
S. Muensit, D. Wilson, I. Guy
{"title":"Study of piezoelectric effect in GaN thin films using a modified Michelson interferometer","authors":"S. Muensit, D. Wilson, I. Guy","doi":"10.1109/COMMAD.1996.610137","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610137","url":null,"abstract":"A single-beam interferometer has been set up to study the piezoelectric response of III-V semiconductors. Small displacements, induced by a driving voltage at a fixed frequency, can be detected and give a direct measurement of the piezoelectric coefficient. The system calibration is checked using a quartz specimen, and the measured d/sub 11/ value is 2.34 pm/V. Measurements on GaN films grown by chemical vapour deposition are also reported. Errors arising from non-uniform film deposition and from substrate bending are discussed.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122049566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ohmic contact spike arrays for nanostructure device fabrication: spike distribution and geometrical scattering of the electron-wave current 用于纳米结构器件制造的欧姆接触尖峰阵列:电子波电流的尖峰分布和几何散射
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610104
R. Newbury, R. P. Taylor, A. Sachrajda, P. Coleridge, Y. Feng, M. Davies, J. McCaffrey
{"title":"Ohmic contact spike arrays for nanostructure device fabrication: spike distribution and geometrical scattering of the electron-wave current","authors":"R. Newbury, R. P. Taylor, A. Sachrajda, P. Coleridge, Y. Feng, M. Davies, J. McCaffrey","doi":"10.1109/COMMAD.1996.610104","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610104","url":null,"abstract":"We examine the ohmic contact-semiconductor interface and the process of current injection in a high mobility GaAs/AlGaAs Corbino device. Magneto-transport measurements demonstrate that weak localisation processes occur within the region of the 2DEG penetrated by the spike array formed on annealing of the ohmic contacts. These studies indicate that patterned ohmic contacts can provide a useful alternative to gated or etched sub-micron structures for fundamental mesoscopic physics investigations.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130584393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ion-implanted waveguide formation in silica 二氧化硅中离子注入波导的形成
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610158
C. Johnson, M. Ridgway, P. Leech
{"title":"Ion-implanted waveguide formation in silica","authors":"C. Johnson, M. Ridgway, P. Leech","doi":"10.1109/COMMAD.1996.610158","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610158","url":null,"abstract":"The optimum processing parameters for the fabrication of low-loss waveguides in fused silica by ion implantation and annealing have been determined through a comparison of implantation-induced physical and optical properties. The step height at an implanted/unimplanted boundary resulting from Si implantation was measured as a function of ion dose (2/spl times/10/sup 12/-6/spl times/10/sup 16//cm/sup 2/), post-implantation annealing temperature (200-900/spl deg/C) and time (0-2.5 hr). For a given ion energy (5 MeV), the compaction increased for doses </spl sim/10/sup 15//cm/sup 2/ and thereafter, saturated. Isochronal and isothermal annealing both resulted in a non-linear reduction in compaction, typical of a thermally-induced process. In contrast to the continual reduction in compaction observed during isochronal annealing, the loss coefficient exhibited a distinct minimum of /spl sim/0.15 dB/cm at an intermediate temperature of 500/spl deg/C. This feature was consistent with the removal of a specific defect or colour centre. Investigation of the annealing behaviour of the B/sub 2/-band indicated that this defect was not responsible for the observed loss behaviour nor was the decrease in refractive index. Surface cracking was observed for C, Si, and Ge-implantations at doses around 8/spl times/10/sup 13//cm/sup 2/, an effect exaggerated for the lighter ions.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129595357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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