用于纳米结构器件制造的欧姆接触尖峰阵列:电子波电流的尖峰分布和几何散射

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610104

R. Newbury, R. P. Taylor, A. Sachrajda, P. Coleridge, Y. Feng, M. Davies, J. McCaffrey

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引用次数: 1

摘要

我们研究了高迁移率GaAs/AlGaAs Corbino器件的欧姆接触-半导体界面和电流注入过程。磁输运测量表明，弱局部化过程发生在欧姆接触退火后形成的尖峰阵列穿透的2DEG区域内。这些研究表明，图形欧姆接触可以为基本介观物理研究提供一个有用的替代门控或蚀刻亚微米结构。

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Ohmic contact spike arrays for nanostructure device fabrication: spike distribution and geometrical scattering of the electron-wave current

We examine the ohmic contact-semiconductor interface and the process of current injection in a high mobility GaAs/AlGaAs Corbino device. Magneto-transport measurements demonstrate that weak localisation processes occur within the region of the 2DEG penetrated by the spike array formed on annealing of the ohmic contacts. These studies indicate that patterned ohmic contacts can provide a useful alternative to gated or etched sub-micron structures for fundamental mesoscopic physics investigations.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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