发布求助
文献互助 智能选刊 最新文献

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings最新文献

筛选
英文 中文
Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures 阳极氧化诱导GaAs/AlGaAs量子阱异质结构混合的光致发光研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610087
P. Burke, M. Gal, S. Yuan, Y. Kim, C. Jagadish
{"title":"Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures","authors":"P. Burke, M. Gal, S. Yuan, Y. Kim, C. Jagadish","doi":"10.1109/COMMAD.1996.610087","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610087","url":null,"abstract":"A novel impurity-free interdiffusion technique, anodic-oxide-induced intermixing is demonstrated. A pulsed anodization of GaAs/AlGaAs quantum well heterostructures (QWH) with subsequent rapid thermal annealing (RTA) at 900/spl deg/C, is studied. Blue shifts of up to 72meV have been observed by photoluminescence (PL) in intermixed samples with no significant broadening of the linewidth and good retention of PL intensity. The blueshift in the PL spectra is shown to increase with no sign of saturation with RTA times up to 120 seconds.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116651431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the role of Ni in forming ultra-low resistance Ni-Ge-Au ohmic contacts to n/sup +/ GaAs Ni在与n/sup +/ GaAs形成超低阻Ni- ge - au欧姆接触中的作用研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610140
N. Lumpkin, G. Lumpkin
{"title":"Investigation of the role of Ni in forming ultra-low resistance Ni-Ge-Au ohmic contacts to n/sup +/ GaAs","authors":"N. Lumpkin, G. Lumpkin","doi":"10.1109/COMMAD.1996.610140","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610140","url":null,"abstract":"Nickel is commonly thought to act as a wetting agent in alloyed Au-Ge ohmic contacts for GaAs-based devices. However work on the optimisation of ohmic contacts for ultra-low resistance has indicated that Ni plays a more complex role. We have investigated a series of Ni-Au-Ge alloys with varying Ni content using cubic central composite experiments and electron microbeam techniques which have allowed us to characterise the alloy microstructure, dopant distribution and contact resistance as a function of Ni content. We conclude that the amount of Ni must be closely matched to the amount of Ge and Au for the formation of ultra-low resistance contacts.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116772501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation hardness study of high purity detector grade silicon 高纯探测器级硅的辐射硬度研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610170
M. Reinhard, A. Rosenfeld, D. Alexiev, V.I. Khivrich, M. Varentsov, P. Litovchenko, A. I. Anokhin, O.S. Zinets
{"title":"Radiation hardness study of high purity detector grade silicon","authors":"M. Reinhard, A. Rosenfeld, D. Alexiev, V.I. Khivrich, M. Varentsov, P. Litovchenko, A. I. Anokhin, O.S. Zinets","doi":"10.1109/COMMAD.1996.610170","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610170","url":null,"abstract":"The damage associated with neutron irradiated and gamma irradiated high purity silicon was investigated for material grown on the basis of different manufacturing technologies. Using Hall effect measurements, observation was made of the carrier type and concentration as a function of gamma and fast neutron dose. Observation of the radiation induced defects was made on neutron irradiated ion implanted silicon detectors using Optical Deep Level Transient Conductance Spectroscopy (ODLTCS). Using this method, the role of residual impurities present within the high purity silicon bulk was observed as a function of time to determine the role of room temperature annealing.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117243614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition 利用单层沉积技术制备和表征精确梯度抛物量子阱
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610100
B. E. Kane, G. R. Facer, R. G. Clark, L. Pfeiffer, K. West, G. Boebinger
{"title":"Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition","authors":"B. E. Kane, G. R. Facer, R. G. Clark, L. Pfeiffer, K. West, G. Boebinger","doi":"10.1109/COMMAD.1996.610100","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610100","url":null,"abstract":"We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al/sub x/Ga/sub 1-x/As molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al/sub x/Ga/sub 1-x/As so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127203826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase retrieval methods for the determination of transverse mode structure in vertical-cavity surface-emitting lasers 确定垂直腔面发射激光器横模结构的相位恢复方法
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610070
M.I. Cohen, A. Rakić, M. Majewski
{"title":"Phase retrieval methods for the determination of transverse mode structure in vertical-cavity surface-emitting lasers","authors":"M.I. Cohen, A. Rakić, M. Majewski","doi":"10.1109/COMMAD.1996.610070","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610070","url":null,"abstract":"The transverse mode properties of vertical-cavity surface-emitting lasers (VCSELs) are investigated by spectrally resolved beam profiling. Near field and far field intensity distributions were measured for a top emitting index guided VCSEL. The Gerchberg-Saxton algorithm was employed to retrieve the phase across the laser aperture.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126137190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of nitrided SiO/sub 2/ on 6H-SiC by RTP 氮化SiO/ sub2 /在6H-SiC上的电学性能
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610151
Hui-feng Li, S. Dimitrijev, H. B. Harrison, D. Sweatman
{"title":"Electrical properties of nitrided SiO/sub 2/ on 6H-SiC by RTP","authors":"Hui-feng Li, S. Dimitrijev, H. B. Harrison, D. Sweatman","doi":"10.1109/COMMAD.1996.610151","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610151","url":null,"abstract":"This paper presents the results of the effect of NO and N/sub 2/O annealing on the electrical characteristics of SiO/sub 2/ grown on the Si-faced n- and p-type 6H SiC by rapid thermal processing (RTP). For n-type 6H-SiC, the as-grown SiO/sub 2/ in pure O/sub 2/ gives near ideal C-V curves. NO annealing has little effect on the C-V curves while N/sub 2/O annealing makes the C-V curves shift to the positive voltage. For p-type 6H-SiC, NO annealing improves the C-V curves greatly. But N/sub 2/O annealing shifts the C-V curves to the negative voltage. Conductance measurements show that NO annealing decreases the interface state density for both n- and p-type 6H-SiC. N/sub 2/O annealing increases the interface state density for n-type 6H-SiC.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126723523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis and characterisation of erbium implanted, titanium diffused lithium niobate optical waveguides 掺铒、钛扩散铌酸锂光波导的分析与表征
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610159
P. Mizzi, M. Austin, A. Mitchell, J. McCallum
{"title":"Analysis and characterisation of erbium implanted, titanium diffused lithium niobate optical waveguides","authors":"P. Mizzi, M. Austin, A. Mitchell, J. McCallum","doi":"10.1109/COMMAD.1996.610159","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610159","url":null,"abstract":"The aim of this study was to investigate erbium doping of LiNbO/sub 3/ using high energy ion implantation. Several Er implanted devices were fabricated and measured at 1300 and 1530 nm. The Er implantation profile was also measured using SIMS and photoluminescence measurements indicated an upper fluorescence lifetime of 2.75 ms.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115054646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance enhancement of heterojunction field-effect transistors by shifting maximum of electrons from close to heterointerface 异质结场效应晶体管在接近异质界面处最大电子位移的性能提高
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610110
W. Lour, Hung-Ren Chen, Ling-Tse Hung, W. Chang
{"title":"Performance enhancement of heterojunction field-effect transistors by shifting maximum of electrons from close to heterointerface","authors":"W. Lour, Hung-Ren Chen, Ling-Tse Hung, W. Chang","doi":"10.1109/COMMAD.1996.610110","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610110","url":null,"abstract":"We report on the fabrication and characteristics of AlGaAs/InGaAs related heterojunction field-effect transistors by MBE. Two methods were used to shift the maximum of electrons from close to the gate-channel heterointerface. Both result in grade-like channels. Due to the superior electron transport properties in InGaAs wells, the studied devices exhibit better characteristics compared with conventional AlGaAs/GaAs and AlGaAs/InGaAs metal-insulator-semiconductor FETs. High breakdown voltages, large turn on voltages, low output conductance, and improved device linearity are obtainable.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115519149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Passivation and reactivation of deep Fe and Cu levels in p-type GaAs p型砷化镓中深层铁和铜水平的钝化和再活化
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610132
C. Radue, A. Conibear, C. Ball
{"title":"Passivation and reactivation of deep Fe and Cu levels in p-type GaAs","authors":"C. Radue, A. Conibear, C. Ball","doi":"10.1109/COMMAD.1996.610132","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610132","url":null,"abstract":"Epitaxial p-type GaAs layers were exposed to a hydrogen plasma. Some of the passivated samples were then annealed under reverse bias in order to determine the energy for thermal dissociation of the passivated deep level-hydrogen complex. In particular, the deep levels attributed to iron and copper were examined. Deep Level Transient Spectroscopy (DLTS) has been used to determine the extent of passivation and reactivation of these deep levels. Although passivation of the copper levels has previously been reported, this is the first time that passivation of the iron level has been observed. A dissociation energy of 0.83 eV was determined for the Fe-H complex.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"745 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116996434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Slow transient recombination phenomenon in mono-crystalline silicon 单晶硅中的缓慢瞬态复合现象
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610052
M. Stuckings, A. Cuevas, J. Lau
{"title":"Slow transient recombination phenomenon in mono-crystalline silicon","authors":"M. Stuckings, A. Cuevas, J. Lau","doi":"10.1109/COMMAD.1996.610052","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610052","url":null,"abstract":"Boron diffusion has been shown in previous studies to reduce the bulk carrier lifetime of high resistivity silicon. Investigation into the optimal boron diffusion conditions for solar cell processing has lead to the discovery of a slow light induced transient phenomenon in 50 and 1000-5000 /spl Omega/cm p-type float zone wafers. The bulk carrier lifetime increases and the emitter recombination current density decreases during the first few minutes of exposure to standard 1-sun intensity light. This improvement in the electronic properties with illumination has previously been inferred from measurements in completed solar cells and is measured quantitatively here.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117029678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信