利用单层沉积技术制备和表征精确梯度抛物量子阱

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610100

B. E. Kane, G. R. Facer, R. G. Clark, L. Pfeiffer, K. West, G. Boebinger

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引用次数: 0

摘要

我们描述了用GaAs/Al/sub x/Ga/sub 1-x/As分子束外延生长的高质量抛物型量子阱的制造和低温表征，该量子阱采用沉积单层GaAs或Al/sub x/Ga/sub 1-x/As的新方法，从而产生平均抛物势。这些井的高质量是由与第二子带人口相关的磁阻振荡的出现证明的，当井的方向几乎与磁场平行时，在低温下可以观察到，这是以前在抛物量子井中未观察到的现象。

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Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al/sub x/Ga/sub 1-x/As molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al/sub x/Ga/sub 1-x/As so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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