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Minority carrier sweepout effects in HgCdTe infrared photoconductors at temperatures above 80K 温度高于80K时HgCdTe红外光电导体中的少数载流子扫频效应
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610078
C. Musca, J.F. Siliquini, E. Smith, J. M. Deli, L. Faraone
{"title":"Minority carrier sweepout effects in HgCdTe infrared photoconductors at temperatures above 80K","authors":"C. Musca, J.F. Siliquini, E. Smith, J. M. Deli, L. Faraone","doi":"10.1109/COMMAD.1996.610078","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610078","url":null,"abstract":"The effect of drift and diffusion of minority carriers into regions of high recombination which occur at the metal/semiconductor interface of contacts, has the effect of reducing the density of photogenerated excess carriers in photoconductive devices. This loss of photogenerated carriers, which is enhanced at higher applied electric fields, is known as minority carrier sweepout, and is an important mechanism that limits the performance of HgCdTe photoconductive devices operating at high bias fields. In this study, experimentally determined contact recombination velocities range from 25 cm/s at 80 K, to 600 cm/s at 200 K for x=0.31 Hg/sub 1-x/Cd/sub x/Te. Hence, it is concluded that contact recombination is a dominant mechanism at higher temperatures even though it may not be significant at 80 K.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129842604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure 极短湿蚀刻反射激光器在GRINSCH-QW gaas基结构中的实现
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610063
F. Karouta, J. Wellen, O. Abu-Zeid, G. Acket, W. van der Vleuten
{"title":"Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure","authors":"F. Karouta, J. Wellen, O. Abu-Zeid, G. Acket, W. van der Vleuten","doi":"10.1109/COMMAD.1996.610063","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610063","url":null,"abstract":"Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 /spl mu/m of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129060382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Engineering high-performance vertical cavity lasers 工程高性能垂直腔激光器
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610054
K.K. Lear, H. Hou, V. Hietala, K. Choquette, R. Schneider
{"title":"Engineering high-performance vertical cavity lasers","authors":"K.K. Lear, H. Hou, V. Hietala, K. Choquette, R. Schneider","doi":"10.1109/COMMAD.1996.610054","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610054","url":null,"abstract":"The cw and high-speed performance of vertical cavity surface emitting laser diodes (VCSELs) are affected by both electrical and optical issues arising from the geometry and fabrication of these devices. Structures with low resistance semiconductor mirrors and Al-oxide confinement layers address these issues and have produced record performance including 50% power conversion efficiency and modulation bandwidths up to 20 GHz at small bias currents.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"82 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129422176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures 高质量GaAs-AlGaAs微结构中低维电子和空穴系统的光谱研究
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610145
V. A. Stadnik, B. E. Kane, R. G. Clark, L. Pfeiffer, K. West
{"title":"Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures","authors":"V. A. Stadnik, B. E. Kane, R. G. Clark, L. Pfeiffer, K. West","doi":"10.1109/COMMAD.1996.610145","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610145","url":null,"abstract":"A highly sensitive photoconductivity (PC) technique has been applied to undoped GaAs-AlGaAs micro-structures with either a single interface or a single quantum well and a gate-controlled variable density of electrons or holes. In zero magnetic field measurements we have found a wide absorption band below the fundamental gap of bulk GaAs, which correlates with the population of 2D states. The PC technique has potential for spectroscopic studies of semiconductor nano-structures, such as quantum wire devices, which present difficulties for other conventional spectroscopy methods.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115787101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of piecewise-linear model for self-consistent calculation of resonant tunnelling current 谐振隧穿电流自洽计算的分段线性模型实现
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610124
C. Leung, D. Skellern
{"title":"Implementation of piecewise-linear model for self-consistent calculation of resonant tunnelling current","authors":"C. Leung, D. Skellern","doi":"10.1109/COMMAD.1996.610124","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610124","url":null,"abstract":"A piecewise-linear model is developed for calculating the resonant tunnelling current when the potential profile is non-linear and has a non-uniform mesh size. This model is apparently better suited for an arbitrary user-specified grid or mesh points generally used in heterostructure semiconductor device modelling programs for solving the one-dimensional Poisson equation. We have implemented the Airy function solutions and transfer matrix technique in this model to calculate the electron transmission probability and charge distribution. The use of a non-uniform mesh size can improve accuracy and reduce computational time for self-consistent calculations of the tunnelling current.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115798830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photo-modulated photoluminescence in III-V semiconductor quantum wells III-V型半导体量子阱中的光调制光致发光
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610130
T. Baars, A. Chtanov, M. Gal
{"title":"Photo-modulated photoluminescence in III-V semiconductor quantum wells","authors":"T. Baars, A. Chtanov, M. Gal","doi":"10.1109/COMMAD.1996.610130","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610130","url":null,"abstract":"We have developed a new technique of modulated photoluminescence (PL) spectroscopy. We show that the signal detected at twice the modulation frequency of the exciting light contains information about the non-linear processes similar to photo-modulated PL experiments. We attribute this non-linear PL signal to the optical modulation of the internal electric field of the quantum well (QW) samples. The method allows the separation of overlapping PL emission lines and provides the emission parameters of the separated lines, even when the PL spectrum itself appears to be featureless.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132521693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of 0.1 /spl mu/m Si MOSFETs with ISRC (Inverted-Sidewall Recessed-Channel) structure for reduced short channel effect 具有ISRC(倒侧壁凹槽沟道)结构的0.1 /spl mu/m Si mosfet的特性，以减少短沟道效应
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610107
J. Lyu, Y. Choi, Yeong-Taek Lee, Byung-Gook Park, K. Chun, J. Lee
{"title":"Characteristics of 0.1 /spl mu/m Si MOSFETs with ISRC (Inverted-Sidewall Recessed-Channel) structure for reduced short channel effect","authors":"J. Lyu, Y. Choi, Yeong-Taek Lee, Byung-Gook Park, K. Chun, J. Lee","doi":"10.1109/COMMAD.1996.610107","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610107","url":null,"abstract":"To solve the problems of trade-off between the short channel effect and the performance enhancement of sub-quarter-micrometer MOSFETs, we have fabricated a 0.1 /spl mu/m recessed channel MOSFET structure called ISRC (Inverted-Sidewall Recessed-Channel) and verified its superiority. The oxide thickness is 4 nm and the effective channel length is 0.1 /spl mu/m. The maximum transconductance at V/sub D/=2.0 V is 455 mS/mm for nMOSFET and 191 mS/mm for pMOSFET. The DIBL (Drain Induced Barrier Lowering) is kept within 70 mV from V/sub D/=0.1 V to V/sub D/=2.0 V for both devices. By the comparison with the conventional MOSFET, the reduction of short channel effects is demonstrated. By simulation, it is verified that this results from the laterally non-uniformly doped channel profile.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115033269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Developing InP/InGaAs detectors for laser radar systems 用于激光雷达系统的InP/InGaAs探测器的研制
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610067
T. Yeow, B. Craig
{"title":"Developing InP/InGaAs detectors for laser radar systems","authors":"T. Yeow, B. Craig","doi":"10.1109/COMMAD.1996.610067","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610067","url":null,"abstract":"Describes efforts at DSTO to examine the application of InP/InGaAs array technology to laser radar sensors. The advantages of InP/InGaAs photodiode technology are its high sensitivity to the \"eye-safe\" laser wavelength, its high frequency operation and the maturity of the basic technology. A hybrid approach is taken in this study to fully optimise the photodetector and read-out modules in order to develop a real-time imaging laser radar system.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117019144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gettering of metals to nanocavities in silicon 金属在硅纳米空腔中的吸附
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610169
A. Kinomura, J. Wong-Leung, M. Petravić, J.S. Williams
{"title":"Gettering of metals to nanocavities in silicon","authors":"A. Kinomura, J. Wong-Leung, M. Petravić, J.S. Williams","doi":"10.1109/COMMAD.1996.610169","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610169","url":null,"abstract":"Nanocavities, produced by high dose hydrogen implantation and subsequent annealing in silicon, have been found to provide favourable sites for the gettering of a range of metallic impurities. In this work, the gettering of high concentrations of Au and Cu to cavities is illustrated. In addition, it is shown that low concentrations of Cu (well below the solid solubility limit in silicon) can also be very efficiently gettered to nanocavities.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"612 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116334544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation 用摄动角相关表征锡注入InP的残留紊乱
1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI: 10.1109/COMMAD.1996.610093
M. Ridgway, A. P. Byrne, E. Bezakova, M. Wehner, R. Vianden
{"title":"Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation","authors":"M. Ridgway, A. P. Byrne, E. Bezakova, M. Wehner, R. Vianden","doi":"10.1109/COMMAD.1996.610093","DOIUrl":"https://doi.org/10.1109/COMMAD.1996.610093","url":null,"abstract":"InP substrates were implanted with /sup 120/Sn, /sup 115/In and/or /sup 31/P ions and thereafter, with trace amounts of radioactive /sup 111/In ions. Following rapid thermal annealling, the fraction of undisturbed /sup 111/In sites was measured with perturbed angular correlation (PAC). Though Sn and In ions have comparable masses, undisturbed fractions of 42 and 67%, respectively, were experimentally determined as attributed to the charge on the ionised donor and differences in bond length. Precipitated Sn atoms were shown to have a negligible influence on the undisturbed fraction. Comparing In-, P- and In-and-P-implanted samples, excess P yielded a greater fraction of undisturbed sites relative to excess In (87 and 67%, respectively) as attributed to the lesser mass of P and hence, the lesser energy deposited in vacancy production. However, In-and-P-implanted samples yielded an intermediate value (81%), demonstrating the influence of non-stoichiometry. Also, complementary double-crystal X-ray diffraction measurements were in qualitative agreement with the results derived from PAC with the latter shown to be an effective analytical technique for the measurement of disorder in ion-implanted InP.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123506183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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