极短湿蚀刻反射激光器在GRINSCH-QW gaas基结构中的实现

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Pub Date : 1996-12-08 DOI:10.1109/COMMAD.1996.610063

F. Karouta, J. Wellen, O. Abu-Zeid, G. Acket, W. van der Vleuten

{"title":"极短湿蚀刻反射激光器在GRINSCH-QW gaas基结构中的实现","authors":"F. Karouta, J. Wellen, O. Abu-Zeid, G. Acket, W. van der Vleuten","doi":"10.1109/COMMAD.1996.610063","DOIUrl":null,"url":null,"abstract":"Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 /spl mu/m of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current.","PeriodicalId":171952,"journal":{"name":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure\",\"authors\":\"F. Karouta, J. Wellen, O. Abu-Zeid, G. Acket, W. van der Vleuten\",\"doi\":\"10.1109/COMMAD.1996.610063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 /spl mu/m of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current.\",\"PeriodicalId\":171952,\"journal\":{\"name\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1996.610063\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1996.610063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

非常短的湿式化学蚀刻反射激光器显示，在阈值电流为70 mA的情况下，器件的激光工作时间降至29 /spl μ m /m的腔长，显示出0.5 mW的输出功率。这些装置同时发射两种或三种不同波长的激光，即大约855,830和805nm。峰值的数量与电流有关。

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Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure

Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 /spl mu/m of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current.

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1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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